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Charge Transport in Pentacene Thin Film Transistors

Published online by Cambridge University Press:  21 March 2011

J. H. Schön ,
L. D. Buchholz ,
Ch. Kloc  and
B. Batlogg
J. H. Schön
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill, NJ 07974, USA
L. D. Buchholz
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Ch. Kloc
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill, NJ 07974, USA
B. Batlogg
Affiliation:
also at : Solid State Physics Laboratory, ETH Hönggerberg, CH-8093 Zürich, Switzerland
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Abstract

The charge transport properties in polycrystalline pentacene thin film transistors is investigated. A potential barrier is formed at grain boundaries due charged trapping states. The influence of such grain boundaries on the hole mobility of the devices is analyzed for different grain sizes, trap concentrations, and carrier densities. The results reveal that room temperature mobilities exceeding 0.5 cm2/Vs can be obtained in thin films with large grains as well as in nanocrystalline material. Consequently, single crystal device limits can be reached also by polycrystalline pentacene thin film transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 665: Symposium C – Electronic, Optical and Optoelectronic Polymers and Oligomers , 2001 , C5.33
Copyright
Copyright © Materials Research Society 2001

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References

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