Hostname: page-component-7479d7b7d-jwnkl Total loading time: 0 Render date: 2024-07-12T09:26:27.161Z Has data issue: false hasContentIssue false
  • English
  • Français

Charge Collection Processes in a-Si:H p-i-n Detectors

Published online by Cambridge University Press:  21 February 2011

T. Pochet
T. Pochet*
Affiliation:
LETI (CEA-Technologies Avancees), DEIN/SPE, Centre d'Etudes Nucleaires de Saclay 91191 Gif-sur-Yvette Cedex, France
Get access

Abstract

Charge induced as a function of time in a-Si:H p-i-n detectors by protons having energies ranging between 5 and 12 MeV have been studied. A multiple trapping transport model is developed in order to explain the non saturation of the collected charge with bias and evidence of a bias dependent recombination process is shown. The dependence of the total induced charge (the detector efficiency) with bias can be expressed by an Onsager function with a thermalization distance of 34 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 573
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Dubeau, J., Pochet, T., Hamel, L.A., Equer, B., Karar, A., Nucl. Instr. & Meth. B54, 458 (1991).CrossRefGoogle Scholar
[2] Hamel, L.A., Dubeau, J., Pochet, T., Equer, B., IEEE Trans. Nucl. Sc. 38, 251 (1991).Google Scholar
[3] Pochet, T., Dubeau, J., Hamel, L.A., Equer, B., Karar, A., J. Non-Cryst. Sol. 115, 72 (1989).Google Scholar
[4] Pochet, T., Dubeau, J., Hamel, L.A., Equer, B., Karar, A., in Amorphous Silicon Technology, edited by Madan, A., Thompson, M., Taylor, P.C., Hamakawa, Y., LeComber, P.G. (Mater. Res. Soc. Proc. 149, Pittsburgh, PA, 1989) p. 661.Google Scholar
[5] Antonuk, L.E., Yorkston, J., Huang, W., Boudry, J., Morton, E.J., Longo, M.J., Street, R.A., IEEE Trans. Nucl. Sc. 39(4), 1069 (1992).CrossRefGoogle Scholar
[6] Perez-Mendez, V., in Physics and Applications of Amorphous and microcrystalline Semiconductor Devices, edited by Kanicki, J. (Artech House Publishers, Boston, 1991).Google Scholar
[7] Fujieda, I., Nelson, S., Street, R.A., Weisfield, R.L., IEEE Trans. Nucl. Sc. 39(4) 1056 (1992).Google Scholar
[8] Pochet, T., Dubeau, J., Equer, B., Karar, A., Hamel, L.A., J. Appl. Phys. 68(3) 1340 (1990).Google Scholar
[9] Pochet, T., Ph. D. Thesis, University of Montreal, 1991.Google Scholar
[10] Tiedje, T., in Semiconductors and Semimetals, Vol. 21, part C (Academic Press, 1984) p. 207.Google Scholar
[11] Carasco, F., Spear, W.E., Phil. Mag. B 47(5) 495 (1983).Google Scholar