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Characterization of TiN Films Prepared by Ion Beam Assisted Deposition
Published online by Cambridge University Press: 25 February 2011
Abstract
One of the advantages of the ion beam assisted deposition process is its controllability of the processing parameters such as: ion-to-atom arrival ratio and the ion energy. In this study, the effects of the nitrogen ion energy (from 1 KV to 30KV) on the TiN film morphology and microstructures were systematically investigated as a function of ion-to-atom arrival ratios, using TEM, XTEM, SEM, ESCA and other analytical techniques.
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- Copyright © Materials Research Society 1989
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