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Characterization of Si1−xGex/Si Heterostructures Using Optically-Detected Magnetic Resonance

Published online by Cambridge University Press:  22 February 2011

T. A. Kennedy ,
E. R. Glaser ,
J. M. Trombetta ,
K. L. Wang ,
C. H. Chern  and
V. Arbet-Engels
T. A. Kennedy
Affiliation:
Electronics Science and Technology Div., Naval Research Laboratory, Washington, DC 20375
E. R. Glaser
Affiliation:
Electronics Science and Technology Div., Naval Research Laboratory, Washington, DC 20375
J. M. Trombetta
Affiliation:
Electronics Science and Technology Div., Naval Research Laboratory, Washington, DC 20375
K. L. Wang
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, CA 90024.
C. H. Chern
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, CA 90024.
V. Arbet-Engels
Affiliation:
Department of Electrical Engineering, University of California at Los Angeles, CA 90024.
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Abstract

Si1−xGex/Si heterostructures with varying layer-thicknesses have been characterized using photoluminescence and magnetic resonance detected on photoluminescence. Three of the four samples studied exhibit sharp photoluminescence bands at different energies. For a 120 Å Si/40 Å Si1−xGex heterostructure, magnetic resonance of an electron in the Si and of a hole in the Sil. xGex layers were observed. These results indicate cross-interface, or Type II, excitonic recombination. Further, anisotropie magnetic resonance spectra indicate the presence of dangling-bonds defects in the heterostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 271
Copyright
Copyright © Materials Research Society 1991

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References

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