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Characterization of Semiconductors and Semiconducting Superlattices Using High-Resolution Photoluminescence Spectroscopy

Published online by Cambridge University Press:  28 February 2011

D. C. Reynolds ,
K. K. Bajaj  and
C. W. Litton
D. C. Reynolds
Affiliation:
Air Force Wright Aeronautical Laboratories, Avionics Laboratory, AFWAL/AADR, Wright-Patterson Air Force Base, Ohio 45433
K. K. Bajaj
Affiliation:
Air Force Wright Aeronautical Laboratories, Avionics Laboratory, AFWAL/AADR, Wright-Patterson Air Force Base, Ohio 45433
C. W. Litton
Affiliation:
Air Force Wright Aeronautical Laboratories, Avionics Laboratory, AFWAL/AADR, Wright-Patterson Air Force Base, Ohio 45433
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Abstract

High resolution photoluminescence for the identification of impurities and defects in semiconductors has emerged as a powerful technique. We review the technique with emphasis on GaAs realizing that it is applicable to many different semiconductor materials. The binding energies of thle ground state and of several low-lying excited states of the impurity centers are determined by studying the radiative transitions associated with excitons bound to neutral donors or acceptors. Recent developments in the studies of GaAs-AlGaAs multi-quantum-well (MQW) structures using high resolution photoluminescence are also reported. Variations of the energies of the various transitions in MQW structures as a function of well size are presented. Estimates of the interfacial quality in these heterostructures are made from line shape analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 339
Copyright
Copyright © Materials Research Society 1985

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