Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-16T19:31:01.203Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Polysilicon films using atomic force microscopy

Published online by Cambridge University Press:  10 February 2011

Francis P. Fehlner ,
Chad B. Moore  and
J. Greg Couillard
Francis P. Fehlner
Affiliation:
Corning Incorporated, Science and Technology Division, Corning, NY, 14831
Chad B. Moore
Affiliation:
Corning Incorporated, Science and Technology Division, Corning, NY, 14831
J. Greg Couillard
Affiliation:
Cornell University, MS&E, Bard Hall, Ithaca, NY, 14853
Get access

Abstract

A simplified technique for characterizing crystallites in polysilicon films has been demonstrated based on use of the atomic force microscope (AFM). The crystallization of films deposited by two different techniques was examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 261
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Kamins, T., Polycrystalline Silicon for Integrated Circuit Applications, page 239. Kluwer Academic Publishers, 1988.Google Scholar
[2] Jenkins, M. W., “A New Preferential Etch for Defects in Silicon Crystals”, J. Electrochem. Soc., 124:757, 1977.Google Scholar
[3] Hatalis, M. K. and Greve, D. W., “Large Grain Polycrystalline Silicon by Low-temperature Annealing of Low-pressure Chemical Vapor Deposited Amorphous Silicon Films”, J. Appl. Phys., 63:2260, 1988.Google Scholar
[4] Wu, I. W., Stuber, S., Tsai, C. C., Yao, W., Lewis, A., Fulks, R., Chiang, A., and Thompson, M., “Processing and Device Performance of Low-Temperature CMOS Poly-TFTs on 18.4” Diagonal Substrates for AMLCD Application”, SID 92 Digest,: 615, 1992.Google Scholar