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Characterization of Novel Emissions in Mg+ -Implanted InP

Published online by Cambridge University Press:  28 February 2011

Tsutomu Iida
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, 305, Japan
Yunosuke Makita
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, 305, Japan
Shigeru Niki
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, 305, Japan
Akimasa Yamada
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, 305, Japan
Hisao Asakura
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, 305, Japan
Shinji Kimura
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, 305, Japan
Akira Obara
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, 305, Japan
Shin-ichiro Uekusa
Affiliation:
School of Science & Technology, Meiji University, 1–1–1, Higashimita, Tama, Kawasaki, 214, Japan
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Abstract

Photoluminescence (PL) measurements have been carried out as a function of temperature and of excitation power on heavily magnesium (Mg) implanted ultra-pure indium phosphide (InP) with a dose concentration, [Mg], ranging from l×lO15cm-3 to 3×1020cm−3. Several undefined emissions have been observed; a strong emission, Z, emerges near the band-acceptor emission for [Mg]= 3×1020cm−3 and two novel emissions, Y1 and Y3 appear below the energy of donor-acceptor pair emission for [Mg] smaller than 3×1018cm−3. In order to obtain more explanation on such emission, temperature and excitation power dependence of the emissions were investigated. Temperature dependent PL experiments revealed that Z is composed of three emissions named ZA, ZBand ZC. Measured activation energies suggest Z represents a pair type transition associated with Mg acceptors. While, Y1 and Y3 emissions are attributed to donor-acceptor type transition because of a significant blue-shift with increasing excitation power.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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