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Characterization of Nano-crystalline Diamond Films Grown Under Continuous DC Bias During Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  31 January 2011

Vincent Mortet ,
Liang Zhang ,
Maxie Echert ,
Ali Soltani ,
Jan D'Haen ,
Olivier Douhéret ,
Myriam Moreau ,
Sebastian Osswald ,
Erik Neyts  and
David Troadec
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Vincent Mortet
Affiliation:
vincent.mortet@uhasselt.be
Liang Zhang
Affiliation:
liang.zhang@ua.ac.be, University of Antwerp, Electron Microscopy for Materials Science, Antwerp, Belgium
Maxie Echert
Affiliation:
maxie.eckert@ua.ac.be, University of Antwerp, Research group PLASMANT, Antwerp, Belgium
Ali Soltani
Affiliation:
ali.soltani@iemn.univ-lille1.fr, Institut d'Electronique de Microélectonique et de Nanotechnologie, Villeneuve d'Ascq, France
Jan D'Haen
Affiliation:
jan.dhaen@uhasselt.be, Hasselt University, Institute for Materials Research, Diepenbeek, Belgium
Olivier Douhéret
Affiliation:
Olivier.Douheret@MATERIANOVA.BE, MateriaNova Research Center, Service de la Chimie des Materiaux Nouveaux, Mons, Belgium
Myriam Moreau
Affiliation:
Myriam.Moreau@univ-lille1.fr, Laboratoire de Spectrochimie Infrarouge et Raman, Villeneuve d'Ascq, France
Sebastian Osswald
Affiliation:
osswald.sebastian@gmail.com, Drexel University, Department of Materials Science and Engineering and A. J. Drexel Nanotechnology Institute, Philadelphia, Pennsylvania, United States
Erik Neyts
Affiliation:
erik.neyts@ua.ac.be, University of Antwerp, Research group PLASMANT, Antwerp, Belgium
David Troadec
Affiliation:
david.troadec@iemn.univ-lille1.fr, Institut d'Electronique de Microélectonique et de Nanotechnologie, Villeneuve d'Ascq, France
Patrick Wagner
Affiliation:
Patrick.Wagner@uhasselt.be, Hasselt University, Institute for Materials Research, Diepenbeek, Belgium
Annemie Bogaerts
Affiliation:
annemie.bogaerts@ua.ac.be, University of Antwerp, Research group PLASMANT, Antwerp, Belgium
Gustaaf Van Tendeloo
Affiliation:
staf.vantendeloo@ua.ac.be, University of Antwerp, Electron Microscopy for Materials Science, Antwerp, Belgium
Ken Haenen
Affiliation:
ken.haenen@uhasselt.be, Hasselt University, Institute for Materials Research, Diepenbeek, Belgium
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Abstract

Nanocrystalline diamond films have generated much interested due to their diamond-like properties and low surface roughness. Several techniques have been used to obtain a high re-nucleation rate, such as hydrogen poor or high methane concentration plasmas. In this work, the properties of nano-diamond films grown on silicon substrates using a continuous DC bias voltage during the complete duration of growth are studied. Subsequently, the layers were characterised by several morphological, structural and optical techniques. Besides a thorough investigation of the surface structure, using SEM and AFM, special attention was paid to the bulk structure of the films. The application of FTIR, XRD, multi wavelength Raman spectroscopy, TEM and EELS yielded a detailed insight in important properties such as the amount of crystallinity, the hydrogen content and grain size. Although these films are smooth, they are under a considerable compressive stress. FTIR spectroscopy points to a high hydrogen content in the films, while Raman and EELS indicate a high concentration of sp2 carbon. TEM and EELS show that these films consist of diamond nano-grains mixed with an amorphous sp2 bonded carbon, these results are consistent with the XRD and UV Raman spectroscopy data.

Keywords

diamondnanostructureRaman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1203: Symposium J – Diamond Electronics and Bioelectronics-Fundamentals to Applications III , 2009 , 1203-J05-03
Copyright
Copyright © Materials Research Society 2010

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References

1 Williams, O.A., Nesládek, M., Daenen, M., Michaelson, Sh., Hoffman, A., Ōsawa, E., Haenen, K., Jackman, R.B., Diamond Relat. Mater. 17, 1080 (2008).Google Scholar
2 Krueger, A., Advanced Mater. 20, 2444 (2008).Google Scholar
3 Huang, H., Pierstorff, E. Osawa, D. Ho, Nano Lett. 7, 3305 (2007).Google Scholar
4 Jiang, N., Sugimoto, K., Eguchi, K., Inaoka, T., Shintani, Y., Makita, H., Hatta, A., Hiraki, A., J. Cryst. Growth 222, 591 (2001).Google Scholar
5 Schreck, M., Baur, T., Fehling, R., Muller, M., Stritzker, B., Bergmaier, A., Dollinger, G., Diamond Relat. Mater. 7, 293 (1998).Google Scholar
6 Gu, C.Z., Jiang, X., J. Appl. Phys. 88, 1788 (2000).Google Scholar
7 Mortet, V., Daenen, M., Teraji, T., Lazea, A., Vorlicek, V., D'Haen, J., Haenen, K., D'Olieslaeger, M., Diamond Relat. Mater. 17, 1330 (2008).Google Scholar
8 Sharda, T., Soga, T., Jimbo, T., Umeno, M., Diamond Relat. Mater. 10, 352 (2001).Google Scholar
9 Ferrari, A.C., Robertson, J., Phys. Rev. B 63 (2001) 121405(R).Google Scholar
10 Kuzmany, H., Pfeiffer, R., Salk, N., Gunther, B., Carbon 42 (2004) 911.Google Scholar
11 Lopez-Rios, T., Sandre, E., Leclercq, S., Sauvain, E., Phys. Rev. Lett. 76 (1996) 4935.Google Scholar
12 Reich, S., Thomsen, C., Phil. Trans. R. Soc. Lond. A 362, 2271 (2004).Google Scholar
13 Thomsen, C., Reich, S., Phys. Rev. Lett. 85, 5214 (2000).Google Scholar
14 Yoshikawa, M., Yuri, Y., Maegawa, M., Katagiri, G., Ishida, H, Ishitani, A., Appl. Phys. Lett. 62, 3114 (1993).Google Scholar
15 Chen, J., Deng, S.Z., Chen, J., Yu, Z.X., and Xu, N.S., Appl. Phys. Lett. 74, 3651 (1999).Google Scholar
16 Nemanich, R.J., Solin, S.A., Martin, R. M., Phys. Rev. B 23, 6348 (1981).Google Scholar
17 Boppart, H., Straaten, J. van, Silver, I., Phys. Rev. B 32, 1423 (1985).Google Scholar
18 Socrates, G., Infrared and Raman characteristic group frequencies - tables and charts, 3rd ed. (John Weiley & Sons Ltd, Chichester, 2001) p. 50.Google Scholar
19 Mantel, B.F., Stammler, M., Ristein, J., Ley, L., Diamond Relat. Mater. 9, 1032 (2000).Google Scholar
20 Michaelson, Sh., Ternyak, O., Akhvlediani, R., Williams, O.A., Gruen, D., Hoffman, A., Phys. Stat. Sol. (a) 204, 2860 (2007).Google Scholar
21 Schrader, Bernhard, Infrared and Raman spectroscopy - Methods and applications (VCH Verlagsgesellschaft mbH, Weinheim, 1995), p.197–199.Google Scholar
22 Michaelson, Sh. and Hoffman, A., Diamond Relat. Mater. 15, 486 (2006).Google Scholar
23 Bachmann, P. K. and Wiechert, D. U., Diam. Relat. Mater. 1, 422 (1992).Google Scholar
24 Kim, J.-Y., Kim, E.-R., Ihm, D.-W., Tasumi, M., Bull. Korean Chem. Soc. 23, 1404 (2002).Google Scholar