Hostname: page-component-7bb8b95d7b-lvwk9 Total loading time: 0 Render date: 2024-09-19T07:21:57.804Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Morphology and Defects in Silicon-Germanium Virtual Substrates

Published online by Cambridge University Press:  10 February 2011

G.D.M. Dilliway ,
A.F.W. Willoughby  and
J.M. Bonar
G.D.M. Dilliway
Affiliation:
Materials Research Group, School of Engineering Sciences, University of Southampton, Highfield, Southampton S017 1BJ, UK, G.D.M.Dilliway@soton.ac.uk
A.F.W. Willoughby
Affiliation:
Materials Research Group, School of Engineering Sciences, University of Southampton, Highfield, Southampton S017 1BJ, UK
J.M. Bonar
Affiliation:
Department of Electronics and Computer Science, University of Southampton, Highfield, Southampton SO 17 1BJ, UK
Get access

Abstract

Silicon-germanium heterostructures incorporating virtual substrates are successfully used for both microelectronic and optoelectronic applications. However their use may be limited by the rough surface morphology and defect content, especially threading dislocations. High quality silicon-germanium heterostructures incorporating virtual substrates have been grown epitaxially using different techniques. Also various methods for improving the surface roughness and threading dislocation density have been reported. This study reports comparatively the effects of two different types of grading (linear and step wise) of the germanium concentration in the virtual substrate on the surface morphology and defect content of silicon-germanium heterostructures grown by Low Pressure Chemical Vapour Deposition (LPCVD) in the Southampton University Microelectronics Centre. Step-grading is demonstrated to produce superior virtual substrates

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 265
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Frank, C., Merwe, J.H. van der, Proc. R. Soc. A 198 205 (1949).Google Scholar
2 Matthews, J.W., Blakeslee, A.E., J. Cryst. Growth 27 118 (1974).Google Scholar
3 Mie, Y.J., Xie, Y.-H., Fitzgerald, E.A., Silverman, P.J., Theil, F.A., Watson, G.P., AppL Phys. Lett. 59 1611 (1991).Google Scholar
4 Schäffler, F., Tobben, D., Herzog, H.R., Abstreiter, G., Hollander, B., Semicond. Sci. Technol. 7 260 (1992).Google Scholar
5 Ismail, K., Chu, J.O., Meyerson, B.S., Appl. Phys. Lett. 64 3124 (1994).Google Scholar
6 Fitzgerald, E.A., Xie, Y.-H., Monroe, D., Silverman, P.J., Kuo, J.M., Koran, A.R., Thiel, F.A., Weir, B.E., J Vac. Sci. Technol. B 10 (4) 1807 (1992).Google Scholar
7 Frank, F.C., J. Cryst. Growth 51 367 (1981).Google Scholar
8 Fitzgerald, E.A., Samavedam, S.B., Xie, Y.-H., Giovane, L.M., J. Vac. Sci. Technol. A 15 (3) 1048 (1997).Google Scholar
9 Csepregi, L., Kennedy, E.F., Mayer, J.W., J. Appl. Phys. 49 3906 (1978).Google Scholar