Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-19T16:08:04.109Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

Published online by Cambridge University Press:  10 February 2011

Daniel Hofstetter ,
Robert L. Thornton ,
Linda T. Romano ,
David P. Bour ,
Michael Kneissl ,
Rose M. Donaldson  and
Clarence Dunnrowicz
Daniel Hofstetter
Affiliation:
University of Neuchftel, Institute of Physics, Rue A.-L. Breguet 1, 2000 Neuchâtel, Switzerland, Daniel.Hofstetter@iph.unine.ch
Robert L. Thornton
Affiliation:
MAXTEK Components Corporation, 13335 SW Terman Road, Beaverton, OR 97075-0428
Linda T. Romano
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
David P. Bour
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Michael Kneissl
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Rose M. Donaldson
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Clarence Dunnrowicz
Affiliation:
XEROX Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Get access

Abstract

We present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as 1. 1 A were observed in 500 μm long and 10 μm wide devices. The 3rd order grating providing feedback was defined holographically and dry-etched into the upper waveguiding layer by chemically-assisted ion beam etching. Even when operating these lasers considerably above threshold, a spectrally narrow emission (3.5 Å) at wavelengths around 400 nm was seen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G2.2
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., InGaN-based multi-quantum-well structure-laser diodes, Jpn. J. Appl. Phys., 35 (1), L74– L76 (1996)Google Scholar
[2] Bour, D.P., Chung, H.F., Götz, W., Krusor, B.S., Hofstetter, D., Rudaz, S., Kuo, C.P., Ponce, F.A., Craford, M.G., and Bringans, R.D. in III-V Nitrides, edited by Moustakas, T.D., Akasaki, I., Monemar, B., and Ponce, F.A. (Mater. Res. Soc. Proc. 443, Pittsburgh, PA, 1996) pp. 509–514 Google Scholar
[3] Kneissl, M., Bour, D.P., Johnson, N.M., Romano, L.T., Krusor, B.S., Donaldson, R., Walker, J., and Dunnrowicz, C., Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching, Appl. Phys. Lett., 72 (13), 1539–1541 (1998)Google Scholar
[4] Hofstetter, D., Bour, D.P., Thornton, R.L., and Johnson, N.M., Excitation of a higher order transverse mode in an optically pumped In0.05Ga0.95N/In0.15Ga0.85 N multiquantum well laser structure, Appl. Phys. Lett., 70 (13), 1650–1652 (1997)Google Scholar
[5] Hofstetter, D., Kneissl, M., Bour, D.P., Dunnrowicz, C., and Thornton, R.L., Demonstration of an InGaN/GaN-based optically pumped multi quantum well DFB laser using holographically-defined 3rd order gratings, Appl. Phys. Lett., 73 (14), 1918–1920 (1998)Google Scholar
[6] Hofmann, R., Gauggel, H.-P., Griesinger, U.A., Gräbeldinger, H., Adler, F., Ernst, P., Bolay, H., Härle, V., Scholz, F., Schweizer, H., and Pilkuhn, M.H., Realization of optically pumped second-order GaInN-distributed-feedback lasers, Appl. Phys. Lett., 69 (14), 2068–2070 (1996)Google Scholar
[7] Chu, S.N.G., Tanbun-Ek, T., Logan, R.A., Vandenberg, J., Sciortino, P.F. Jr, Wisk, P., and Pernell, T.L., Grating overgrowth and defect structures in distributed-feedback-buried hererostructure laser diodes, IEEE Journal of Selected Topics in Quantum Electronics, 3 (3), 862–873 (1997)Google Scholar