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Characterization of InGaAs/Inp Epitaxial Layers Grown Over V-Groove Patterned Inp Substrates Using Gas Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  21 February 2011

N.J. Bulitka ,
A. Gupta ,
B.J. Robinson ,
D.A. Thompson ,
G.C. Weatherly  and
J.G. Simmons
N.J. Bulitka
Affiliation:
Now with Waterloo Scientific Inc., 419 Phillip St. #9, Waterloo, ON, Canada N2L 3X2
A. Gupta
Affiliation:
McMaster University, Dept. Materials Science and Engineering, Hamilton, ON. L8S 4M1
B.J. Robinson
Affiliation:
McMaster University, Centre for Electrophotonic Materials and Devices, Hamilton, ON L8S 4L7
D.A. Thompson
Affiliation:
McMaster University, Centre for Electrophotonic Materials and Devices, Hamilton, ON L8S 4L7
G.C. Weatherly
Affiliation:
McMaster University, Dept. Materials Science and Engineering, Hamilton, ON. L8S 4M1
J.G. Simmons
Affiliation:
McMaster University, Centre for Electrophotonic Materials and Devices, Hamilton, ON L8S 4L7
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Abstract

Gas source molecular beam epitaxy has been used to deposit single InP layers, and multiple layers of InGaAs/InP over V-groove patterned (100) InP substrates. The V-grooves were defined by the (211)A and (111)B family of crystal planes. Scanning electron microscopy, transmission electron microscopy, and scanning photoluminescence were used to characterize the variation in the composition and thickness of the epitaxial layers. Defect-free epitaxial layers were achieved within (211)A V-grooves; whereas, dislocations were observed in the InGaAs layers deposited within (111)B grooves. The dislocations are attributed to the large lattice mismatch caused by a variation in composition due to differential Group111 diffusion on the groove sidewalls. Scanning photoluminescence indicates an In (100) diffusion length of 2.2-3.5\lm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 39
Copyright
Copyright © Materials Research Society 1994

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