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Characterization Of G-R Noise In GaN Films Grown By RF-MBE On Intermediate-Temperature Buffer Layers

Published online by Cambridge University Press:  21 March 2011

W.K. Fong ,
B.H. Leung ,
C.F. Zhu  and
Charles Surya
W.K. Fong
Affiliation:
The Hong Kong Polytechnic University Department Of Electronic And Information Engineering Hong Kong
B.H. Leung
Affiliation:
The Hong Kong Polytechnic University Department Of Electronic And Information Engineering Hong Kong
C.F. Zhu
Affiliation:
The Hong Kong Polytechnic University Department Of Electronic And Information Engineering Hong Kong
Charles Surya
Affiliation:
The Hong Kong Polytechnic University Department Of Electronic And Information Engineering Hong Kong
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Abstract

We report detailed investigations of generation-recombination (G-R) noise in GaN films grown by rf-plasma assisted molecular beam epitaxy on intermediate-temperature buffer layer (ITBL) in addition to conventional low-temperature buffer layer. To characterize the film quality affected by the use of ITBL, low-frequency noise measurements were performed. The voltage noise power spectra show a strong dependence on the thickness of the ITBL. A model has been presented to explain the observed G-R noise, which stipulates that the phenomenon arises from the thermally activated trapping and detrapping of carriers by traps. The process leads to the correlated fluctuations in both the carrier number and the coulombic scattering rate. Detailed numerical evaluation shows that number fluctuation dominates in our samples. The calculated trap densities show that the use of ITBL can effectively reduce defect density by over an order of magnitude.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.38.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Nakamura, S., Mukai, T., and Senoh, M., Jpn. J. Appl. Phys. 30, L1998 (1993).10.1143/JJAP.30.L1998Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 69, 3034 (1996).10.1063/1.116830Google Scholar
3. Khan, M.A., Kuzina, J.N., Olson, D.T., and Hove, J.M. Van, Appl. Phys. Lett. 60, 2917 (1992).10.1063/1.106819Google Scholar
4. Jain, S.C., Willander, M., Narayan, J., and Overstraeten, R. Van, J. Appl. Phys. 87, 965 (2000).10.1063/1.371971Google Scholar
5. Kuznia, J.N., Khan, M. Asif, Olson, D.T., R. Kaplan, and Freitas, J., J. Appl. Phys. 73, 4700 (1993).10.1063/1.354069Google Scholar
6. Akasaki, I., Amano, H., Hiramatsu, K., and Sawaki, N., J. Crystal Growth 98, 209 (1989).10.1016/0022-0248(89)90200-5Google Scholar
7. Fong, W.K., Zhu, C.F., Leung, B.H., and Surya, C., MRS Internet J. Nitride Semicond. Res. 5, 12 (2000).10.1557/S1092578300000120Google Scholar
8. Fong, W.K., Zhu, C.F., Leung, B.H., and Surya, C., J. Crystal Growth 233, 431 (2001).10.1016/S0022-0248(01)01592-5Google Scholar
9. Zhu, C.F., Fong, W.K., Leung, B.H., and Surya, C., Appl. Phys. A 72, 495 (2001).10.1007/s003390100797Google Scholar
10. Leung, B.H., Fong, W.K., Zhu, C.F., and Surya, C., IEEE Trans. Electron Devices 48, 2400 (2001).10.1109/16.954483Google Scholar
11. Zhu, C.F., Fong, W.K., Leung, B.H., Cheng, C.C., and Surya, C., IEEE Trans. Electron Devices 48, 1225 (2001).Google Scholar
12. Machlup, S., J. Appl. Phys. 25, 341 (1954).10.1063/1.1721637Google Scholar
13. Surya, C. and Hsiang, T.Y., Phys. Rev. B 35, 6343 (1987).10.1103/PhysRevB.35.6343Google Scholar
14. Hooge, F.N., IEEE Trans. Electron Devices 41, 1926 (1994).Google Scholar
15. Shan, W., Hauenstein, R.J., Fischer, A.J., Song, J.J., Perry, W.G., Bremser, M.D., Davis, R.F., and Goldenberg, B., Phys. Rev. B 54, 13460 (1996).10.1103/PhysRevB.54.13460Google Scholar
16. Edwards, N.V., Bremser, M.D., Batchelor, A.D., Buyanova, I.A., Madsen, L.D., Yoo, S.D., Wethkamp, T., Wilmers, K., Cobet, C., Esser, N., Davis, R.F., Aspnes, D.E., and Monemar, B., Thin Solid Films 364, 98 (2000).Google Scholar
17. Hearne, S., Chason, E., Han, J., Floro, JA., Figiel, J., Hunter, J., Amano, H., and I.Tsong, S.T., Appl. Phys. Lett. 74, 356 (1999).Google Scholar
18. Sugiura, L., J. Appl. Phys. 81, 1633 (1997).10.1063/1.364018Google Scholar
19. Schroeder, M. and Wolf, D.E., Surf. Sci. 375, 129 (1997).10.1016/S0039-6028(96)01250-2Google Scholar