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Characterization of Defects in N-Type 6H-SiC Single Crystals by Optical Admittance Spectroscopy

Published online by Cambridge University Press:  22 February 2011

A.O. Evwaraye ,
S.R. Smith  and
W.C. Mitchel
W.C. Mitchel
Affiliation:
Wright Laboratory, Materials Directorate, WL/MLPO, Wright-Patterson Air Force Base, Ohio 45433-7707.
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Abstract

Optical admittance spectroscopy is a technique for measuring the conductance and capacitance of a junction under illumination as a function of the wavelength of the light and the frequency of the measuring AC signal. For the first time, this technique is applied to characterize deep defect levels in 6H-SiC:N. Nitrogen is a donor atom in 6H-SiC which substitutes for carbon in three inequivalent sites (h, kl, k2). giving rise to n-type conduction. Deep defect levels attributible to transition metal impurities have been identified in 6H-SiC:N by optical admittance spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 353
Copyright
Copyright © Materials Research Society 1994

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