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Characterization of Defects in Heavily Si-Doped GaAs by A Monoenergetic Positron Beam

Published online by Cambridge University Press:  03 September 2012

A. Uedono ,
Y. Ujihira ,
L. Wei  and
S. Tanigawa
A. Uedono
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan
Y. Ujihira
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan
L. Wei
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
S. Tanigawa
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
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Abstract

Native defects in Si-doped, Zn-doped and undoped GaAs grown by horizontal Bridgman (HB) method and molecular beam epitaxiy (MBE) were studied by a monoenergetic positron beam. Positron lifetime spectra and Doppler broadening profiles were also measured by using energetic positrons. It was found that monovacancies were usually found in Si-doped HB-GaAs, however, divacancies were created in a specimen with low impurity concentration. For Zn-doped HB-GaAs, interstitial clusters were found to be major type of defects. The high concentration of monovacancies and of divacancies coexist in heavily Si-doped MBE-GaAs. These vacancy-complexes were found to act to reduce the concentration of free carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 277
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Positron Solid-Stafe Physics, edited by Brandt, W. and Dupasquier, A. (North-Holland, Amsterdam, 1983).Google Scholar
2. Dlubek, G. and Krause, R., phys. stat. sol. (a) 102, 443 (1987).Google Scholar
3. Dannefear, S., in Defect Control in Semiconductors, edited by Sumino, K. (Elsevier Science, North-Holland, 1990) pp. 1561–1572.Google Scholar
4. Dannefaer, S., Hogg, B. and Kerr, D., Phys. Rev. B, 30, 3355 (1984).Google Scholar
5. Hautojärvi, P., Moser, P., Stucky, M., Corbel, C. and Plazaola, F., Appl. Phys. Lett., 48, 809 (1986).Google Scholar
6. Dlubek, G., Dlubek, A., Krause, R., Brümmer, O., Friedland, K. and Rentzsch, R., phys. stat. sol. (a) 106, 419 (1988).Google Scholar
7. Corbel, C., Stucky, M., Hautojärvi, P., Saarinen, K. and Moser, P., Phys. Rev. B, 38, 8192 (1988).Google Scholar
8. Dannefaer, S., Mascher, P. and Kerr, D., Materials Science Forum, 38–41. 893 (1989).Google Scholar
9. Saarinen, K., Hautojärvi, P., Vehanen, A., Krause, R. and Dlubek, G., Phys. Rev. B, 39, 5287 (1989).Google Scholar
10. Dannefaer, S., Mascher, P. and Kerr, D., J. Phys. Condensed Matter, 1, 3213 (1989).Google Scholar
11. Saarinen, K., Corbel, C., Hautojärvi, P., Lanki, P., Pierre, F. and Vignaud, D., J. Phys. Condensed Matter, 2, 2453 (1990).Google Scholar
12. Corbel, C., Pierre, F., Hautojärvi, P., Saarinen, K. and Moser, P., Phys. Rev. B, 11, 10632 (1990).Google Scholar
13. Krause, R., Saarinen, K., Hautojärvil, P., Polity, A., Gärtner, G. and Corbel, C., Phys. Rev. Lett., 65, 3329 (1990).Google Scholar
14. Dannefaer, S., Mascher, P. and Kerr, D., J. Appl. Phys., 69, 4080 (1991).CrossRefGoogle Scholar
15. Mascher, P., Dannefaer, S. and Kerr, D., Can. J. Phys., 69, 228 (1991).Google Scholar
16. Uedono, A., Wei, L., Dosho, C., Kondo, H., Tanigawa, S. and Tamura, M., Jpn. J. Appl. Phys., 30, 1591 (1991).Google Scholar
17. Schultz, P. J. and Lynn, K. G., Rev. Mod. Phys., 60, 701 (1988).Google Scholar
18. Baraff, G. A. and Schlüter, M., Phys. Rev. Lett., 55, 1327 (1985)Google Scholar
19. Dannefaer, S. and Kerr, D., J. Appl. Phys., 60, 1313 (1986).Google Scholar
20. Lee, J. -L., Wei, L., Tanigawa, S. and Kawabe, M., J. Appl. Phys., 69, 6364 (1991).Google Scholar
21. Keinonen, J., Hautala, M., Rauhala, E., Karttunen, V., Räisänen, A., Lahtinen, J., Vehanen, A., Punkká, E., and Hautojärvi, P., Phys. Rev. B, 12, 8269 (1988).Google Scholar
22. Wei, L., Cho, Y.-K., Dosho, C., Kurihara, T. and Tanigawa, S., Jpn. J. Appl. Phys., 30, 2863 (1991).CrossRefGoogle Scholar