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Characterization of Defects in GaP, GaAs and GaAsl-xPx Electroluminescent Diodes by Transmission Electron Microscope

Published online by Cambridge University Press:  26 February 2011

Mitsuji Hirata ,
Seiji Takeda  and
Katsushi Fujii
Mitsuji Hirata
Affiliation:
College of General Education, Osaka University, Toyonaka, Osaka 560, Japan
Seiji Takeda
Affiliation:
College of General Education, Osaka University, Toyonaka, Osaka 560, Japan
Katsushi Fujii
Affiliation:
Mitsubishi Monsanto Chemical Co., Ushiku Machi, Inashiki Gun, Ibaraki 300–12, Japan
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Abstract

Dislocations and some other lattice defects were observed in typical III-V semiconducting materials. The usefulness of electron microscopy is emphasized and some examples of characterizing the nature of lattice imperfections are presented here.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 495
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1]Dupuy, M. and Lafeuille, D., J. Cryst. Growth 31 244 (1975).Google Scholar