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Characterization of CVD Diamond Films Used for Radiation Detection.

Published online by Cambridge University Press:  21 February 2011

F. Foulon ,
T. Pochet ,
E. Gheeraert  and
A. Deneuville
F. Foulon
Affiliation:
LETI (CEA - Technologies Avancées) / DEIN / SPE, Centre d'Etudes de Saclay, 91191 Gif- sur-Yvette, France.
T. Pochet
Affiliation:
LETI (CEA - Technologies Avancées) / DEIN / SPE, Centre d'Etudes de Saclay, 91191 Gif- sur-Yvette, France.
E. Gheeraert
Affiliation:
Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS, B.P. 166, 38042 Grenoble Cedex 9, France.
A. Deneuville
Affiliation:
Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS, B.P. 166, 38042 Grenoble Cedex 9, France.
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Abstract

Diamond films produced by microwave plasma enhanced chemical vapor deposition (CVD) technique and used to fabricate radiation detectors have been characterized. The polycrystalline diamond films have a measured resistivity of 1012 Ω.cm and a carrier lifetime of about 530 ps. The carrier mobility - lifetime product depends on the density of photogenerated carriers. The carrier mobility decreases from 160 to 13 cm2/V.s for a carrier density increase from 2 × 1011 cm-3 to 3.7 × 1013 cm-3. The detector response to laser pulses (λ= 355, 532 and 1064 nm), X-ray flux (2.5 – 16 keV) and alpha particles (241Am, 5.49 MeV) has been investigated. The response speed of the detector is in the 100 ps range. X-ray photon flux measurements and alpha particle counting capabilities of the CVD diamond detectors are demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 185
Copyright
Copyright © Materials Research Society 1994

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References

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