Hostname: page-component-7bb8b95d7b-fmk2r Total loading time: 0 Render date: 2024-09-21T04:01:33.379Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of (Ba,Sr)RuO3 Films Deposited by Metal-organic Chemical Vapor Deposition

Published online by Cambridge University Press:  17 March 2011

Duck-Kyun Choi ,
Joong-Seo Kang ,
Young-Bae Kim ,
Duck-Hwa Hong ,
Hyun-Chul Kim ,
Sung-Tae Kim  and
Cha-Young Yoo
Duck-Kyun Choi
Affiliation:
Department of Ceramic Engineering, Hanyang University Seoul133-791, Korea
Joong-Seo Kang
Affiliation:
Department of Ceramic Engineering, Hanyang University Seoul133-791, Korea
Young-Bae Kim
Affiliation:
Department of Ceramic Engineering, Hanyang University Seoul133-791, Korea
Duck-Hwa Hong
Affiliation:
Department of Ceramic Engineering, Hanyang University Seoul133-791, Korea
Hyun-Chul Kim
Affiliation:
Department of Ceramic Engineering, Hanyang University Seoul133-791, Korea
Sung-Tae Kim
Affiliation:
Semiconductor R&D Division, Samsung Electronics Company
Cha-Young Yoo
Affiliation:
Semiconductor R&D Division, Samsung Electronics Company
Get access

Abstract

Thin film electrodes of the perovskite oxide (Ba,Sr)RuO3 (BSR) were deposited on 4 inch ptype Si wafers by metal organic chemical vapor deposition (MOCVD) for the practical (Ba,Sr)TiO3 (BST) capacitor application using a new single cocktail source. The source materials used for the MOCVD BSR process were Ba(METHD)2, Sr(METHD)2 and Ru(METHD)3 and these were dissolved in n-butyl acetate. The source-feeding rate was precisely controlled by liquid mass flow controllers (LMFC). As-deposited BSR films possessed a (110)-oriented structure, with good uniformity and adherence on bare Si wafer. The phase formation was strongly affected by the oxygen flow rate and the input source rate. As the oxygen flow rate increased, the Ru/(Ba+Sr) composition ratio in the film decreased, while the Ba/(Ba+Sr) ratio was almost independent of the oxygen flow rate. The dielectric constants of BST capacitors fabricated using these electrodes was greater than 500.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C4.25.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Abe, K. and Komatsu, S., J. Appl. Phys. 77, 6461 (1995).Google Scholar
2. Paek, S. H., Won, J. H., Lee, K. S., Choi, J. S. and Park, C. S., Jpn. J. Appl. Physics. Part 11, 5757 (1996).Google Scholar
3. Takemura, K., Sakuma, T., Matsubara, S., Yamamichi, S., Yamaguchi, H. and Miyasaka, Y., Proc. 4th Int. Symp. Integrated Ferroelectrics, Monterey, 481 (1992).Google Scholar
4. Pan, W. and Desu, S. B., J.Vac. Sci. Technol. B12(6), 3208 (1994).Google Scholar
5. Parker, L. H. and Tasch, A. F., IEEE Cir. Dev. Mag. (1), 17 (1990).Google Scholar
6. Izuha, M., Abe, K., and Fukushima, N., Jpn. J. Appl. Physics. Part 1 36, 5866 (1997).Google Scholar
7. Chu, C. M. and Lin, P., Appl. Phys. Lett. 72, 1241 (1998).Google Scholar
8. Son, S. Y., Kim, B. S., and Choi, D. K., Korean, J. Phys. Soc. 32, S1517 (1998).Google Scholar
9. Choi, D. K., Kim, B. S., Son, S. Y., Oh, S. H. and Park, K. W., J. Appl. Physics. Part 1 86, 3347 (1999).Google Scholar
10. Park, K. W., Park, J. H., Oh, S. H., Kim, B. S., Chung, Y. C. and Choi, D. K., J. Vac. Sci. Technol. B19(1), 281 (2001).Google Scholar
11. Jeon, Y. A., Choi, E. S., Seo, T. S. and Yoon, S. G., Appl. Phys. Lett., V. 79, no. 7, 1012 (2001).Google Scholar
12. Exhilvalavan, S. and Tseng, T. Y., Materials Chemistry and Physic. 65. (2000).Google Scholar
13. Park, J. H., Kang, J. S., Kim, Y. B. and Choi, D. K., 3rd Asian Meeting on Ferroelectrics, will be published in “Ferroelectrics”.Google Scholar