Hostname: page-component-848d4c4894-pftt2 Total loading time: 0 Render date: 2024-05-14T09:25:37.978Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of a-SiCx:H Films for c-Si Surface Passivation

Published online by Cambridge University Press:  01 February 2011

M. Vetter ,
I. Martín ,
A. Orpella ,
C. Voz ,
J. Puigdollers  and
R. Alcubilla
M. Vetter
Affiliation:
Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya Gran Capità S/N, Mòdul C4, 08034 Barcelona, Spain.
I. Martín
Affiliation:
Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya Gran Capità S/N, Mòdul C4, 08034 Barcelona, Spain.
A. Orpella
Affiliation:
Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya Gran Capità S/N, Mòdul C4, 08034 Barcelona, Spain.
C. Voz
Affiliation:
Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya Gran Capità S/N, Mòdul C4, 08034 Barcelona, Spain.
J. Puigdollers
Affiliation:
Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya Gran Capità S/N, Mòdul C4, 08034 Barcelona, Spain.
R. Alcubilla
Affiliation:
Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya Gran Capità S/N, Mòdul C4, 08034 Barcelona, Spain.
Get access

Abstract

Amorphous intrinsic silicon carbide (a-SiCx:H(i)) films and amorphous phophorous doped silicon carbide (a-SiCx:H(n)) films deposited by plasma enhanced chemical vapor deposition (PECVD) from silane/methane mixtures provide excellent electronic passivation of p-type c-Si. Effective surface recombination velocities (Seff) lower than 23 cm s-1 have been reported for a- SiCx:H(i) films and Seff < 11 cm s-1 for a-SiCx:H(n) films. The analysis of the dependence of Seff on the injection level indicates that the good electronic passivation is due to field-effect passivation resulting from a high fixed charge (Qf) created in the a-SiCx:H film. In this work the absorption of SiH bonds in infrared transmission spectra of a-SiCx:H films is quantitatively analysed resulting in about 30% smaller amount of SiH bonds in phosphorous doped films compared to intrinsic films. Furthermore, a strong reciprocal correlation of the hydrogen content in the films and the Qf created at the a-SiCx:H/c-Si interface is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A24.5
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Martín, I., Vetter, M., Orpella, A., Puigdollers, J., Cuevas, A., Alcubilla, R., Appl. Phys. Lett. 79, 2199(2001).10.1063/1.1404406Google Scholar
2. Martín, I., Vetter, M., Orpella, A., Puigdollers, J., Voz, C., Marsal, L.F., Pallarés, J., Alcubilla, R., Thin Solid Films 403-404, 476–479 (2002).Google Scholar
3. Martín, I., Vetter, M., Orpella, A., Voz, C., Puigdollers, J. and Alcubilla, R., presented at the 17th Europ. Photovoltaic Solar Energy Conf., Munich, Oct. 2001.Google Scholar
4. Cuevas, A., Stocks, M., Macdonald, D., Sinton, R., Proc. 2nd World Conf. Exh. Photovoltaic Solar Energy Conv. (Viena) 1998, p. 1236.Google Scholar
5. Helms, C. R. in The Si-SiO2 System (Mat. Sci. Monographs 32, ed. Balk, P.) (Elsevier, Amsterdam, 1988) p. 99.Google Scholar
6. Robertson, J., Powell, M.J., Appl. Phys. Lett. 44, 415(1984).10.1063/1.94794Google Scholar
7. Deal, B. E., Sklar, M., Grove, A. S., Snow, E. H., J. Electrochem. Soc. 114, 266(1967).10.1149/1.2426565Google Scholar
8. Vetter, M., Rojahn, M., Mat. Sci. Eng. B71, 321(2000).Google Scholar
9. Brodsky, M. H., Cardona, M., Cuomo, J. J., Phys. Rev. B16, 3556(1977).10.1103/PhysRevB.16.3556Google Scholar
10. Langford, A.A., Fleet, M.L., Nelson, B.P., Lanford, W.A., Maley, N., Phys.Rev. B45, 13367 (1992)Google Scholar
11. Wieder, H.. Cardona, M., Guarnieri, C.R., phys. stat. sol. (b) 92, 99(1979).Google Scholar
12. Rava, P., Crovini, G., Demichelis, F., Giogis, F., Pirri, C.F., J. Appl. Phys. 80, 4116(1996).Google Scholar
13. Shen, S. C., Cardona, M., Phys. Rev. B23, 5322(1981).10.1103/PhysRevB.23.5322Google Scholar