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Characteristics of Ti/Pt/Au Ohmic Contacts on p-type GaN/AlxGa1-xN Superlattices

Published online by Cambridge University Press:  03 September 2012

L. Zhou ,
F. Khan ,
A.T. Ping ,
A. Osinski  and
I. Adesida
L. Zhou
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, Univ. of Illinois, Urbana-Champaign, IL 61801, U.S.A.
F. Khan
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, Univ. of Illinois, Urbana-Champaign, IL 61801, U.S.A.
A.T. Ping
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, Univ. of Illinois, Urbana-Champaign, IL 61801, U.S.A.
A. Osinski
Affiliation:
NZ Applied Technologies, Woburn, MA 01801, U.S.A.
I. Adesida
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, Univ. of Illinois, Urbana-Champaign, IL 61801, U.S.A.
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Abstract

Ti/Pt/Au metallization on p-type GaN/AlxGa1-xN (x=0.10 and 0.20) superlattices (SL) were investigated as ohmic contacts. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is shown to be an effective ohmic metallization scheme on p-type GaN/AlxGa1-xN superlattices. A specific contact resistance of Rc = 4.6×10-4 Ω-cm2 is achieved for unalloyed Ti/Pt/Au on GaN/Al0.2Ga0.8N SL. This is reduced to 1.3×10-4 Ω-cm2 after annealing for 5 minutes at 300 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W10.3
Copyright
Copyright © Materials Research Society 1999

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