Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-26T23:31:43.122Z Has data issue: false hasContentIssue false

Characteristics of Cu/C Films on Polymer Substrate Prepared by Room Temperature ECR-MOCVD Coupled with Periodic DC Bias

Published online by Cambridge University Press:  11 February 2011

Joong Kee Lee
Affiliation:
Eco-Nano Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang Seoul 130–650, Korea
Hyungduk Ko
Affiliation:
Dept. of Material Science, Korea University
Jin Hyun
Affiliation:
Dept. of Material Science, Korea University
Dongjin Byun
Affiliation:
Dept. of Material Science, Korea University
Byung Won Cho
Affiliation:
Eco-Nano Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang Seoul 130–650, Korea
Dalkeun Park
Affiliation:
Eco-Nano Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang Seoul 130–650, Korea
Get access

Abstract

Cu/C films were prepared at room temperature under Cu(hfac)2-Ar-H2 atmosphere in order to obtain metallized polymer by using ECR-MOCVD (Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with periodic DC bias system. Room temperature MOCVD was possible when periodic negative voltage was applied on the polymer substrate. The periodic negative voltage induces ions and radicals to have nucleation reaction on the surface of the substrate. Formation of Cu/C films strongly depends on the periodic negative pattern of DC bias and the electric sheet resistance of the films was controlled from 108 to 100ohm/sq ranges by process parameters such as microwave power and magnet current. The increase in microwave power and magnet current brought on copper-rich film formation with low electric resistance. On the other hand carbon-rich films with high sheet electric resistance were prepared with decreased values for process parameters aforementioned.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Gandikota, S., Rong, S. V., Duboust, T. A. and Cong, D., Microelectronic Engineering, 50, 547553 (2000).CrossRefGoogle Scholar
2. Han, E. G., Kim, E. A. and Oh, K. W., Synthetic Metals, 123, 469476 (2001).CrossRefGoogle Scholar
3. Mohamed, N. A., Eur. Polym. J., 34(3/4), 387398 (1998)‥Google Scholar
4. Weichenhain, R., Wesner, D. A., Pfleging, W., Horn, H., and Kreutz, E. W., Applied Surface Science, 109/110, 264269. (1997).CrossRefGoogle Scholar