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Channeling Phenomena of Direct Si-Implantation to Liquid-Glass Encapsulation Czochralski GaAs Crystal Wafers Through Observation of Threshold Voltages

Published online by Cambridge University Press:  22 February 2011

Yasuyuki Saito  and
Katsuyoshi Fukuda
Yasuyuki Saito
Affiliation:
Microelectronics Ctr., Tamagawa Works, Toshiba Corp., 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan
Katsuyoshi Fukuda
Affiliation:
Research and Development Ctr., Toshiba Corp., 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan
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Abstract

Threshold voltages of Si-implanted gallium arsenide (GaAs) MESFETs depend on not only wafer crystallographic characteristics, but also MESFET fabrication processes. When the position of the orientation flat was changed to improve mechanical shock tolerance, it was found that Vth varied on the wafers due to a crystallographic orientation effect on the Si implantation. Thus, we investigated Vth distributions on wafers of several different Si implantation orientations. It was confirmed that Vth largely varies according to Si-implantation orientations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 331
Copyright
Copyright © Materials Research Society 1994

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References

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