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Channel Profile Engineering of MOSFETs using Delta Doping

Published online by Cambridge University Press:  22 February 2011

Andrew C. G. Wood  and
Anthony G. O'Neill
Andrew C. G. Wood
Affiliation:
University of Newcastle-upon-Tyne, Dept. of Electrical and Electronic Engineering, Merz Court, Newcastle-upon-Tyne, NEI 7RU, United Kingdom.
Anthony G. O'Neill
Affiliation:
University of Newcastle-upon-Tyne, Dept. of Electrical and Electronic Engineering, Merz Court, Newcastle-upon-Tyne, NEI 7RU, United Kingdom.
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Abstract

The influence of the location, dose and width of the doping spike in a delta doped MOSFET is investigated theoretically. Calculations are performed for a range of n and p type 5M0SFETS, and the importance of each design parameter of the device is assessed. The optimum device has a delta layer around 2 0nm deep, with a sheet doping density around 1012cm−2 for the pMOSFET and 5.1011cm−2 for the nMOSFET. The effect of diffusion of the dopant during processing on the device performance is also considered, and it is found that this causes a shift in the threshold voltage of the device. The layer width should ideally be kept below 5nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 465
Copyright
Copyright © Materials Research Society 1991

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References

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