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Catastrophic Optical-damage in High-power, Broad-area Laser-diodes

Published online by Cambridge University Press:  31 January 2011

Aland K. Chin ,
Rick K. Bertaska ,
Martin A. Jaspan ,
Allen M. Flusberg ,
Steve D. Swartz ,
Maciej T. Knapczyk ,
Israel Smilanski  and
Jonah H. Jacob
Aland K. Chin
Affiliation:
kwangyu50@yahoo.com, ALAND CHIN, LLC, Sharon, Massachusetts, United States
Rick K. Bertaska
Affiliation:
kwangyu50@yahoo.com, ALAND CHIN, LLC, Sharon, Massachusetts, United States
Martin A. Jaspan
Affiliation:
kwangyu50@yahoo.com, ALAND CHIN, LLC, Sharon, Massachusetts, United States
Allen M. Flusberg
Affiliation:
kwangyu50@yahoo.com, ALAND CHIN, LLC, Sharon, Massachusetts, United States
Steve D. Swartz
Affiliation:
kwangyu50@yahoo.com, ALAND CHIN, LLC, Sharon, Massachusetts, United States
Maciej T. Knapczyk
Affiliation:
kwangyu50@yahoo.com, ALAND CHIN, LLC, Sharon, Massachusetts, United States
Israel Smilanski
Affiliation:
kwangyu50@yahoo.com, ALAND CHIN, LLC, Sharon, Massachusetts, United States
Jonah H. Jacob
Affiliation:
kwangyu50@yahoo.com, ALAND CHIN, LLC, Sharon, Massachusetts, United States
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Abstract

A detailed description of the phenomenon of catastrophic optical-damage (COD) in short (380μm cavity-length), 12μm aperture, proton-bombarded, double-heterostructure laser-diodes with uncoated facets was first presented in 1974. In these devices, COD generally initiates at the facets due to high optical-power density and propagate along transverse-mode filaments. To achieve reliable operation at high optical-power, broad-area laser-diodes have evolved to long (several-millimeter cavity-length), wide-aperture (50-200μm), dielectric-defined, broadened-waveguide, separate-confinement, double-heterostructure, quantum-well laser-diodes with coated, passivated facets. COD in these devices involve both transverse modes and ring-cavity modes.

Keywords

laseroptical propertiessemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B01-01
Copyright
Copyright © Materials Research Society 2010

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