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Catalytic Oxidation of Silicon Nitride thin films Using Potassium*
Published online by Cambridge University Press: 25 February 2011
Abstract
Thin silicon nitride films on a Si(100) substrate have been oxidized using potassium in a low thermal budget process. The presence of potassium on the SisN4 surface greatly lowers the temperature-time requirements for oxidation as compared with direct thermal oxidation.
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- Copyright © Materials Research Society 1989