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Carrier Mapping in Thermoelectric Materials

Published online by Cambridge University Press:  05 August 2013

Georgios S. Polymeris
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Euripides Hatzikraniotis
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Eleni C. Stefanaki
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Eleni Pavlidou
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Theodora Kyratsi
Affiliation:
Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus.
Konstantinos M. Paraskevopoulos
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Mercouri G. Kanatzidis
Affiliation:
Department of Chemistry, Northwestern University, 2145 North Sheridan Road, Evanston, IL 60208, U.S.A
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Abstract

The application of micro-fourier transform infrared (FTIR) mapping analysis to thermoelectric materials towards identification of doping inhomogeneities is described. Micro-FTIR, in conjunction with fitting, is used as analytical tool for probing carrier content gradients. The plasmon frequency ωP2 was studied as potential effective probe for carrier inhomogeneity and consequently doping differentiation based on its dependence of the carrier concentration. The method was applied to PbTe-, PbSe- and Mg2Si- based thermoelectric materials.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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