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Carrier Doping of Silicon Nanowires Synthesized by Laser Ablation

Published online by Cambridge University Press:  01 February 2011

Naoki Fukata ,
Naoya Okada ,
Satoshi Matsushita ,
Takao Tsurui ,
Shun Ito ,
Jun Chen ,
Takashi Sekiguchi ,
Noriyuki Uchida  and
Kouichi Murakami
Naoki Fukata
Affiliation:
FUKATA.Naoki@nims.go.jp, National Institutefor Materials Science, Advanced Electronic Materials Center, 1-1 Namiki, Tsukuba, 305-0044, Japan, +81-29-860-4769, +81-29-860-4794
Naoya Okada
Affiliation:
n.okada@s.bk.tsukuba.ac.jp, University of Tsukuba, Institute of Applied Physics, 1-1-1 Tennodai, Tsukuba, 305-8573, Japan
Satoshi Matsushita
Affiliation:
s-matsu@s.bk.tsukuba.ac.jp, University of Tsukuba, Institute of Applied Physics, 1-1-1 Tennodai, Tsukuba, 305-8573, Japan
Takao Tsurui
Affiliation:
tsurui@imr.tohoku.ac.jp, Tohoku University, Institute for Materials Research, 2-1-1 Katahira, Sendai, 980-8577, Japan
Shun Ito
Affiliation:
shunito@imr.tohoku.ac.jp, Tohoku University, Institute for Materials Research, 2-1-1 Katahira, Sendai, 980-8577, Japan
Jun Chen
Affiliation:
CHEN.Jun@nims.go.jp, National Institutefor Materials Science, Advanced Electronic Materials Center, 1-1 Namiki, Tsukuba, 305-0044, Japan
Takashi Sekiguchi
Affiliation:
SEKIGUCHI.Takashi@nims.go.jp, National Institutefor Materials Science, Advanced Electronic Materials Center, 1-1 Namiki, Tsukuba, 305-0044, Japan
Noriyuki Uchida
Affiliation:
uchida@bk.tsukuba.ac.jp, University of Tsukuba, Institute of Applied Physics, 1-1-1 Tennodai, Tsukuba, 305-8573, Japan
Kouichi Murakami
Affiliation:
murakami@bk.tsukuba.ac.jp, University of Tsukuba, Institute of Applied Physics, 1-1-1 Tennodai, Tsukuba, 305-8573, Japan
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Abstract

Boron (B) doped silicon nanowires (SiNWs) were synthesized by laser ablation. Local vibrational modes of B in SiNWs were observed by micro-Raman scattering measurements at room temperature. Broadening due to a coupling between the discrete optical phonon and a continuum of interband hole excitations was also observed in the Si optical phonon peak. This is called Fano broadening. These results prove that B atoms were doped in substitutional sites of crystalline Si core of SiNWs during laser ablation.

Keywords

nanostructureablationSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 963: Symposium Q – Nanowires and Carbon Nanotubes – Science and Applications , 2006 , 0963-Q10-37
Copyright
Copyright © Materials Research Society 2007

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References

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