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Carbon-related Deep States in Compensated n-type and Semi-Insulating GaN:C and their Influence on Yellow Luminescence

Published online by Cambridge University Press:  01 February 2011

A. Armstrong ,
D. Green ,
A. R. Arehart ,
U. K. Mishra ,
J. S. Speck  and
S. A. Ringel
A. Armstrong
Affiliation:
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
D. Green
Affiliation:
Materials and Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara, CA 93106, USA
A. R. Arehart
Affiliation:
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
U. K. Mishra
Affiliation:
Materials and Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara, CA 93106, USA
J. S. Speck
Affiliation:
Materials and Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara, CA 93106, USA
S. A. Ringel
Affiliation:
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
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Abstract

The physical origin of the yellow luminescence in MBE-grown GaN co-doped with C and Si was investigated. Deep level optical spectroscopy (DLOS), deep level transient spectroscopy (DLTS), and photoluminescence (PL) were used to study the deep level spectrum as a function of C incorporation. In the absence of C co-doping, samples were n-type and demonstrated a weak yellow luminescence band, likely related to VGa. For increasing C co-doping, samples became semi-insulating concurrent with increased intensity of the yellow luminescence and the concentration of C-related deep acceptors. The DLOS results were used to develop a configuration-coordinate model for a C-related deep level with optical ionization energy of 3.0 eV and Franck-Condon shift of 0.4 eV that is consistent with the observed yellow luminescence and DLTS results. From these findings, a general model for independent mechanisms of the yellow luminescence related to VGa for n-type GaN and C for n-type and semi-insulating GaN:C:Si is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E5.7
Copyright
Copyright © Materials Research Society 2005

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References

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