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Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

Published online by Cambridge University Press:  03 September 2012

N. Tsubouchi ,
Y. Horino ,
B. Enders ,
A. Chayahara ,
A. Kinomura  and
K. Fujii
N. Tsubouchi
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, tsubouchi@onri.go.jp
Y. Horino
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, tsubouchi@onri.go.jp
B. Enders
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, tsubouchi@onri.go.jp
A. Chayahara
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, tsubouchi@onri.go.jp
A. Kinomura
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, tsubouchi@onri.go.jp
K. Fujii
Affiliation:
Osaka National Research Institute, AIST, Ikeda, Osaka 563, Japan, tsubouchi@onri.go.jp
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Abstract

Using a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 605
Copyright
Copyright © Materials Research Society 1997

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References

1. Liu, A. Y., Cohen, M. L., Science. 245, 841 (1989)Google Scholar
2. Liu, A. Y., Cohen, M. L., Phys. Rev. B41, 10727(1990)Google Scholar
3. Han, H.-X., Feldman, B.J., Solid State Commun. 65, 921(1988)Google Scholar
4. Clay, K. J., Speakman, S. P., Amaratunga, G. A. J., Silva, S. R. P., J. Appl. Phys. 79, 7227(1996)Google Scholar
5. Miyake, S., Watanabe, S., Miyazawa, H., Murakawa, M., Kaneko, R., Miyamoto, T., Appl. Phys. Lett. 65, 3206(1994)Google Scholar
6. Niu, C., Lu, Y.Z., Lieber, C.M., Science. 261, 334(1993)Google Scholar
7. Chen, M.Y., Li, D., Lin, X., Dravid, V.P., Chung, Y.-W., Wong, M.-S., Sproul, W.D., J. Vac. Sci. Technol. A11, 521(1993)Google Scholar
8. Zhao, X.-A., Ong, C.W., Tsang, Y.C., Wong, Y.W., Chan, P.W., Coy, C.L., Appl. Phys. Lett. 66, 2652(1995)Google Scholar
9. Matsumoto, O., Kotaki, T., Shikano, H., Takemura, K., Tanaka, S., J. Electrochem. Soc. 141, L16(1994)Google Scholar
10. Mariotto, G., Freire, F.L. Jr., Achete, C.A., Thin Solid Films 241, 255(1994)Google Scholar
11. Hofsäss, H.C., Ronning, C., Griesmeier, U., Gross, M., Mat. Res. Soc. Symp. Proc. Vol.354, 93(1995)Google Scholar
12. Marton, D., Al-Bayati, A.H., Todorov, S.S., Boyd, K.J., Rabalais, J.W., Nucl. Instrum. Methods. B90, 277(1994)Google Scholar
13. Horino, Y., Tsubouchi, N., Fujii, K., Nakata, T., Takagi, T., Nucl. Instrum. Methods. B106, 657(1995)Google Scholar
14. Kumar, S., Tansley, T.L., Thin Solid Films 256, 44(1995)Google Scholar
15. Kaufman, J. H., Metin, S., Saperstein, D.D., Phys. Rev. B39, 13053(1989)Google Scholar
16. Enders, B., Horino, Y., Tsubouchi, N., Chayahara, A., Kinomura, A., Fujii, K., Nucl. Instrum. Methods. in pressGoogle Scholar