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Capillary Instabilities in Cobalt Silicide Thin Films

Published online by Cambridge University Press:  21 February 2011

Shekhar Pramanick ,
Bijoy Patnaik  and
George A. Rozgonyi
Shekhar Pramanick
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Bijoy Patnaik
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
George A. Rozgonyi
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
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Extract

Capillary instability poses a serious concern for applicability of thin layers in next generation of microelectronics devices. Two completely independent models, Mullins' Grain Boundary Grooving model and the Geometrical Agglomeration model have been used to explain capillary instabilities in CoSi2 layer formed on polycrystalline and single crystal substrates, respectively. Inadequacies of these separate models have been highlighted in our experimental work using cross-sectional transmission electron microscopy. A new empirical model, which incorporates both of these models, will be presented which shows the dependence of groove depth on annealing duration, diffusion coefficient, annealing temperature and grain diameter to film thickness ratio, D. The new model not only explains the various peculiarities of silicide grooving on both single and polycrystalline substrates, it also predicts the severe agglomeration of nanoscale layers experimentally observed during silicide formation by Co/Si reaction at 700 °C, 10 sec rapid thermal anneal. Also, experimental verification of agglomeration suppression schemes which are based on the above empirical model will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 593
Copyright
Copyright © Materials Research Society 1995

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References

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