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Buried-shallow-implant (Bsi) process for High Efficiency Microwave power Mesfets

Published online by Cambridge University Press:  26 February 2011

S. G. Liu  and
D. R. Capewell
S. G. Liu
Affiliation:
David Sarnoff Research Center, Princeton N. J. 08543
D. R. Capewell
Affiliation:
David Sarnoff Research Center, Princeton N. J. 08543
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Abstract

We present a hybrid implant epitaxy process that alleviates the inherent depth-width-dependent limitation of ion implantation. This technique allows shallow implants, which produce a thin active N layer with a controlled doping gradient, to be buried at an arbitrary depth below the less-critical, epitaxiallygrown surface layer. The formation and characteristics of GaAs buried shallow-implant (BSI) layers for microwave power FETs will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 689
Copyright
Copyright © Materials Research Society 1989

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References

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