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Boron Doping in Si-MBE

Published online by Cambridge University Press:  22 February 2011

K. Eberl ,
S. S. Iyer ,
S. L. Delage ,
B. A. Ek  and
J. M. Cotte
K. Eberl
Affiliation:
IBM Research Division, T. J. Watson Research Center Yorktcwn Heights, NY 10598
S. S. Iyer
Affiliation:
IBM Research Division, T. J. Watson Research Center Yorktcwn Heights, NY 10598
S. L. Delage
Affiliation:
IBM Research Division, T. J. Watson Research Center Yorktcwn Heights, NY 10598
B. A. Ek
Affiliation:
IBM Research Division, T. J. Watson Research Center Yorktcwn Heights, NY 10598
J. M. Cotte
Affiliation:
IBM Research Division, T. J. Watson Research Center Yorktcwn Heights, NY 10598
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Abstract

We have investigated p-type doping of Si and SiGc layers in M BE by using two different boron sources. One is a SiB alloy which is prepared in situ by melting elemental boron into Si. Typical B concentrations in the source material are a few percent. Doping levels within 1×1018 cm−3 and 5.5×1019 cm−3 can be adjusted within the temperature range of 350°C to 850°C. No indication of segregation or memory effects is found. The activation is between 90 and 100%. The second p-type doping source investigated is a diborane (B2H6) gas source. Diborane provides doping capability in the range between 1016. to 1020. The incorporation efficiency at 550°C is about 2×10'3. It depends on the diborane exposure and the substrate temperature. The activation at 550°C is above 90%. For lower growth temperatures the activation is considerably reduced. The problem of memory effects is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 121
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1 Ota, Y., ‘Silicon Molecular Beam Epitaxy’ Thin Solid Films 106, 3 (1983).Google Scholar
2 Kubiak, R. A. A., Parker, E. H. C., and Iyer, S. S., ‘Si-MBE Growth System - Tech nology and Practice’ in CRC Press: Silicon Molecular Beam Epitaxy Kasper, E., Bean, J. C. Vol I, 5 (1988).Google Scholar
3 Sundgren, J. E., Knall, J., Ni, W. X., Hasan, M. A., Markert, L. C., and Greene, J. E., ‘Dopant Incorporation Kinetics and Abrupt Profiles During Silicon Molecular Beam Epitaxy’, Thin Solid Films 183, 281 (1989).CrossRefGoogle Scholar
4 Kubiak, R. A. A., Leong, W. Y., and Parker, E. H. C., ‘p-Type Doping in Si Molecular Beam Epitaxy by Coevaporation of Boron’, Appl. Phys. Lett. 44 (9), 878 (1984).Google Scholar
5 Denhoff, M. W., ‘Boron evaporator for doping silicon thin films’, J. Vac. Sci. Technol. B 8 (5), 1035 (1990).Google Scholar
6 Ostrom, R. and Allen, F.G., ‘Boron doping in Si molecular beam epitaxy by co- evaporation of B2O3 or doped silicon’, Appl. Phys. Lett. 48 (3), 221 (1986).CrossRefGoogle Scholar
7 Tatsumi, T., Hirayama, H., and Aizaki, N., ‘Boron doping iti Si-MBE’, Appl. Phys. Lett. 50, 1236 (1987).Google Scholar
8 Iyer, S. S., Delage, S. L., Ek, B. A., and Thompson, R. D., Boron source for Si MBE, patent pendingGoogle Scholar
9 Armigliato, A., Nobili, D., Ostoja, P., Servidori, M., and Solmi, S.. ‘Solubility and Precibitation of Boron in Silicon’, Proceedings of the Electrochemical Society 1977 Semiconductor Silicon, 638 (1977).Google Scholar
10 Iyer, S. S., Patton, G. L., Stork, J. M. C., Meyerson, B. S., and Harame, D. L., ‘Heterojunction Bipolar Transistors using Si-Gc alloys’, IEEE Trans. Electron. Dev. 36, 2043–2064 (1989).Google Scholar
11 Kesan, V. P., May, P. G., LeGoues, F. K., and Iyer, S. S., ‘Si/SiGe helerostructurcs grown on SIMOX substrates by MBE for integrated optoelectronics’, J. Crystal Growth, to be published -, (1991).CrossRefGoogle Scholar
12 Leong, W. Y., Robbins, D. J., Young, I. M., and Glaspcr, J. L., ‘P- and N- Type Doping in UHV/CVD Si Epitaxy’, UK Information Technology 88 Conference July 4–7 Swansea 1, 382 (1988).Google Scholar
13 Meyerson, B. S., Legoue, F. K., Nguyen, T. N., Harame, Arid D. L., ‘Non-equltbrium boron doping effects in low temperature epitaxial silicon films’, Appl. Phys. Lett. 50 (2), 113 (1987).CrossRefGoogle Scholar
14 Yu, Ming L., Vitkavago, D. J., and Meyerson, B. S., ‘Doping reaktion of PH3 and B2H6 with Si (100)’, J. Appl. Phys. 59 (12), 4032 (1986).Google Scholar