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Bonded-H in Gate Dielectrics Deposited by Plasma Assisted Chemical Vapor Deposition and Subjected to Rapid Thermal Annealing
Published online by Cambridge University Press: 10 February 2011
Abstract
The incorporation of bonded nitrogen into ultra thin SiO2 gate dielectrics has become an important technology issue. Nitrogen atoms bonded in the immediate vicinity of the Si-SiO2 interface improve device reliability in n-channel field effect transistors. N- atom incorporation at the monolayer concentration range has been achieved by remote plasma assisted oxidation in N2O at 300°C. The incorporation mechanism and the stability of bonded-N are discussed.
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- Copyright © Materials Research Society 1996
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