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Blue and Yellow Luminescence in ZnO Films Grown by Peroxide MBE

Published online by Cambridge University Press:  01 February 2011

Vitaliy Avrutin ,
Mikhail A. Reshchikov ,
Natalia Izyumskaya ,
Ryoko Shimada  and
Hadis Morkoç
Vitaliy Avrutin
Affiliation:
vavrutin@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 West Main St., Richmond, VA, 23284, United States, (804) 827 7000 ext. 357, (804) 828 4269
Mikhail A. Reshchikov
Affiliation:
mreshchi@vcu.edu, Virginia Commonwealth University, Physics, 1020 West Main St., Richmond, VA, 23284, United States
Natalia Izyumskaya
Affiliation:
nizioumskaia@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 West Main St., Richmond, VA, 23284, United States
Ryoko Shimada
Affiliation:
rshimada@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 West Main St., Richmond, VA, 23284, United States
Hadis Morkoç
Affiliation:
hmorkoc@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 West Main St., Richmond, VA, 23284, United States
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Abstract

We observed strong shifts of the blue and yellow luminescence bands with variation of excitation intensity in ZnO films grown on sapphire by MBE using hydrogen peroxide as a source of reactive oxygen. The blue band, having a maximum in the range from 2.85 to 3.15 eV in different samples and different excitation intensities at 10 K, is attributed to diagonal transitions from the conduction band (or shallow donors) to the valence band in realm of potential fluctuations caused by random distribution of charged point defects in a compensated semiconductor. The yellow band is related to an unidentified deep acceptor.

Keywords

luminescencemolecular beam epitaxy (MBE)semiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1035: Symposium L – Zinc Oxide and Related Materials–2007 , 2007 , 1035-L11-22
Copyright
Copyright © Materials Research Society 2008

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