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Bilayer Structures Obtained by Pulsed Laser Quenching of Binary Systems

Published online by Cambridge University Press:  26 February 2011

P. Baeri ,
G. Foti ,
M. G. Grimaldi ,
F. Priolo ,
R. Reitano ,
A. G. Cullis  and
N. G. Chew
P. Baeri
Affiliation:
Dipartimento di Fisica dell'Università, Corso Italia 57,195129 Catania,ITALY
G. Foti
Affiliation:
Dipartimento di Fisica dell'Università, Corso Italia 57,195129 Catania,ITALY
M. G. Grimaldi
Affiliation:
Dipartimento di Fisica dell'Università, Corso Italia 57,195129 Catania,ITALY
F. Priolo
Affiliation:
Dipartimento di Fisica dell'Università, Corso Italia 57,195129 Catania,ITALY
R. Reitano
Affiliation:
Dipartimento di Fisica dell'Università, Corso Italia 57,195129 Catania,ITALY
A. G. Cullis
Affiliation:
Royal Signals and Radar Establishment,St.Andrews road,WR143PS WORCS,U.K.
N. G. Chew
Affiliation:
Royal Signals and Radar Establishment,St.Andrews road,WR143PS WORCS,U.K.
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Abstract

NiSi and Ni2Si layers on silicon substrates as well as high fluence Si(As) ion implanted layers,have been rapidly melted by 30 ns Nd laser pulse irradiation.The energy density ranged between 0.4 and 1.2 J/cm2. Bilayer structures have been observed when the energy density has been chosen properly.

Buried epitaxial layers together with an amorphous or a policrystalline layer on top,have been detected by RBS and TEM measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 615
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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