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Below Gap Excitation of Photoluminescence in a-Si:H

Published online by Cambridge University Press:  15 February 2011

X. Yin ,
M. E. Raikh  and
P. C. Taylor
X. Yin
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
M. E. Raikh
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
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Abstract

PL measurements on device-quality samples of a-Si:H (dark ESR bulk signal, Ns < 3 × 1015spins/cm3) and on a sample with Ng = 1016 spins/cm3 have been performed using excitation energies, E×, from approximately 1.3 to 2.4 eV. Sample temperatures investigated cover the range 4 to 300 K, and PL energies both below and above the excitation energies were measured. PL spectra were recorded from approximately 0.7 to 1.8 eV with a dynamic range exceeding 1012 at constant incident power density. The results permit the separation of the one-photon (band-tail to band-tail) and two-photon (two consecutive excitations through silicon dangling bonds) excitation processes. In contrast to the well-known, strong temperature dependence of the PL efficiencies near the PL peak, the PL at the highest energies (> 1.7 eV) depends only weakly on the temperature at constant Ex.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 167
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Ristein, J., Hooper, B., Gu, S. and Taylor, P. C., Solar Cells 27, 403 (1989).Google Scholar
2. Gu, S. Q. and Taylor, P. C., MRS Symp. Proc. 192, 107 (1990).Google Scholar
3. Ristein, J., Hooper, B. and Taylor, P. C., Opt, J.. Soc. Am. 6, 1003 (1989).Google Scholar
4. Gu, S. Q., Taylor, P. C. and Ristein, J., J. Non-Cryst. Solids 137–138, 591 (1991).Google Scholar
5. Gu, S. Q. and Taylor, P. C., MRS Symp. Proc. 258, 771 (1992).Google Scholar
6. Gu, S. Q., Raikh, M. A. and Taylor, P. C., Phys. Rev. Lett. 69, 2697 (1992).Google Scholar
7. Gu, S. Q., Taylor, P. C., McKinley, J. T., Ueda, A., Yang, X. and Tolk, N. H., Proc. SPIE 1854, 77 (1993).Google Scholar
8. Saleh, R., Ulber, I. and Fuhs, W., MRS Symp. Proc. 297, 219 (1993).Google Scholar
9. Yin, X., Viner, J. M., Gu, S. Q., Raikh, M. E. and Taylor, P. C., Phys. Rev. B 49, 5073 (1994).Google Scholar
10. Ulber, I., Barth, A., Fuhs, W. and Mell, H., MRS Symp. Proc. 336, 141 (1994).Google Scholar