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BaTiO3 Thin Films Prepared by Organometallic Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

L.A. Wills
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
B.W. Wessels
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
D.L. Schulz
Affiliation:
Department of Chemistry, Northwestern University, Evanston, Illinois 60208
T.J. Marks
Affiliation:
Department of Chemistry, Northwestern University, Evanston, Illinois 60208
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Abstract

BaTiO3 thin films have been prepared by low pressure organometallic chemical vapor deposition on (100) MgO and (100) LaAlO3 substrates using the volatile precursors, titanium(IV) tetraisopropoxide and barium (hexafluoroacetylacetonate)2 (tetraglyme). The phase composition and structure of the films depends on the reactant partial pressure, growth temperature, and substrate. High quality, epitaxial BaTiO3 films can be prepared in-situ on LaAlO3 as confirmed by x-ray diffraction measurements. These BaTiO3 films exhibit smooth surface morphologies as evidenced by scanning electron microscopy. Electrical resistivity measurements indicate that the films are semi-insulating.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

1. Johnson, C.J., Appl. Phys. Lett. 7, 221 (1965).Google Scholar
2. Miller, R.C., Appl. Phys. Lett. 5, 17 (1964).Google Scholar
3. Schuneman, P.G., Pollak, T.M., Yang, Y., Teng, Y.Y. and Wong, C., J. Opt. Soc. Am. B. 5 (8), 1702 (1988).Google Scholar
4. Surowiak, Z., Margolin, A.M., Zakharchenkov, I.N. and Biryukov, S.V., Thin Solid Films, 176, 227 (1989).Google Scholar
5. Kwak, B.S., Zhang, K., Boyd, E.P., Erbil, A. and Wilkens, B.J., J. Appl. Phys. 69, 767 (1991).Google Scholar
6. VanBuskirk, P.C., Gardiner, R. and Kirlin, P.S., presented at the 1990 MRS Fall Meeting, Boston, MA (in press).Google Scholar
7. Norton, M.G., English, G. R. and Carter, C.B., Mat. Res. Soc. Symp. Proc. 200, 237 (1990).Google Scholar
8. Wills, L.A., Wessels, B.W., Richeson, D.S. and Marks, T.J., Appl. Phys. Lett., in press.Google Scholar
9. Pauw, L.J. van der, Philips Res. Rpt. 13 (1958).Google Scholar
10. Geller, S. and Bala, V.B., Acta. Cryst. 9, 1019 (1956).Google Scholar
11. Ellingham, H.J.T., J. Soc. Chem. Ind. 63, 125 (1944).Google Scholar
12.JCPDS, Powder Diffraction Files-Inorganic Phases (Center for Diffraction Data), Swarthmore, PA 1989).Google Scholar
13. Tekster-Proskuryakova, G.N. and Sheftel, I.T., Sov. Phys. Sol. State, 5 (12), 2542 (1964).Google Scholar
14. Daniels, J., Philips Res. Repts. 31, 505 (1976).Google Scholar
15. Perluzzo, B. and Destry, J., Can. J. Phys. 56, 453 (1978).Google Scholar