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Auto Feeding Epitaxial Growth of Oxide Thin Film without Oxidant

Published online by Cambridge University Press:  21 March 2011

Kazuo Shimoyama ,
Kousuke Kubo ,
Tatsuro Maeda  and
Kikuo Yamabe
Kazuo Shimoyama
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan
Kousuke Kubo
Affiliation:
Institute of Applied Physics, University of Tsukuba Tsukuba, Ibaraki 305-8573, Japan
Tatsuro Maeda
Affiliation:
Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan
Kikuo Yamabe
Affiliation:
Institute of Applied Physics, University of Tsukuba Tsukuba, Ibaraki 305-8573, Japan
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Abstract

High-quality thin films of BaTiO3 and SrTiO3 on SrTiO3 substrate were obtained by shutting off the oxygen supply during growth. Epitaxial growths were carried out with molecular-beam epitaxy (MBE) under extremely low oxygen partial pressure (pO2 < 1×10−8 Pa). Although only Ba(Sr) and Ti metals were supplied without introducing oxidant during the growth, clear reflection high-energy electron diffraction (RHEED) intensity oscillations from layer-by-layer growth were observed. The deposited films were found to have approximately stoichiometric compositions of BaTiO3 and SrTiO3. Oxygen was automatically fed from the substrate during the growths. It was found that the BaTiO3/SrTiO3 interface was abrupt without intermixing, despite a considerable amount of oxygen seems to have moved from the substrate to the film through the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F11.2
Copyright
Copyright © Materials Research Society 2001

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References

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