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Au/n-ZnO Rectifying Contacts Fabricated with Hydrogen Peroxide Pre-treatment

Published online by Cambridge University Press:  01 February 2011

Qilin Gu ,
Chi-Chung Ling ,
Chor-Keung Cheung ,
Jiaming Luo ,
Xudong Chen ,
Aleksandra Djurisic ,
Gerhard Brauer ,
Wolfgang Anwand ,
Wolfgang Skorupa  and
Helfried Reuther
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Qilin Gu
Affiliation:
gump423@gmail.com, The University of Hong Kong, Department of Physics, Rm 417B, CYM Physics Building, The University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong, N/A, Hong Kong
Chi-Chung Ling
Affiliation:
ccling@hku.hk, The University of Hong Kong, Department of Physics, Hong Kong, N/A, China, People's Republic of
Chor-Keung Cheung
Affiliation:
h9917038@hkusua.hku.hk, The University of Hong Kong, Department of Physics, Hong Kong, N/A, China, People's Republic of
Jiaming Luo
Affiliation:
h0399965@hkusua.hku.hk, The University of Hong Kong, Department of Physics, Hong Kong, N/A, China, People's Republic of
Xudong Chen
Affiliation:
chenxa@hkusua.hku.hk, The University of Hong Kong, Department of Physics, Hong Kong, N/A, China, People's Republic of
Aleksandra Djurisic
Affiliation:
dalek@hkusua.hku.hk, The University of Hong Kong, Department of Physics, Hong Kong, N/A, China, People's Republic of
Gerhard Brauer
Affiliation:
g.brauer@fzd.de, Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, Dresden, N/A, Germany
Wolfgang Anwand
Affiliation:
w.anwand@fzd.de, Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, Dresden, N/A, Germany
Wolfgang Skorupa
Affiliation:
W.Skorupa@fzd.de, Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, Dresden, N/A, Germany
Helfried Reuther
Affiliation:
h.reuther@fzd.de, Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, Dresden, N/A, Germany
Hock-Chun Ong
Affiliation:
hcong@phy.cuhk.edu.hk, The Chinese University of Hong Kong, Department of Physics, Hong Kong, N/A, China, People's Republic of
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Abstract

Au contacts were fabricated on pressurized melted grown n-type ZnO single crystal samples pre-treated with boiling organic solvent and hydrogen peroxide. Contacts fabricated without any pre-treatment and with boiling organic solvent pre-treatment were found to have ohmic behavior. For the samples pre-treated with hydrogen peroxide, the Au contacts were found to have rectifying property. Systematic investigation was performed to study the dependence of the Schottky barrier height and the reverse bias leakage current on the temperature and the duration of the pre-treatment. Positron annihilation spectroscopy (PAS), X-ray photoemission (XPS) and scanning electron microscope (SEM) were also used to understand how the vacancy type defect, contamination and surface morphology would influence the electrical property of the fabricated contacts.

Keywords

defectssemiconductingx-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F11-15
Copyright
Copyright © Materials Research Society 2007

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References

1. özgür, ü., Alivov, Ya. I., Liu, C., Teke, A., Reshchikov, M. A., Dogan, S., Avrutin, V., Cho, S.-J. and Morkoç, H., J. Appl. Phys. 98, 041301 (2005).Google Scholar
2. Pearton, S. J., Norton, D. P., Ip, K., Heo, Y. W. and Steiner, T., Prog. Mater. Sci. 50, 293 (2005).Google Scholar
3. Look, D. C., Mater. Sci. Eng. B 80, 383 (2001).Google Scholar
4. Mead, C. A., Phys. Lett. 18, 218 (1965).Google Scholar
5. Neville, C. and Mead, C. A., J. Appl. Phys. 41, 3795 (1970).Google Scholar
6. Coppa, B. J., Davis, R. F. and Nemanich, R. J., Appl. Phys. Lett. 82, 400 (2003).Google Scholar
7. Auret, F. D., Goodman, S. A., Hayes, M., Legodi, M. J., Laarhoven, H. A. van and Look, D. C., Appl. Phys. Lett. 79, 3074 (2001).Google Scholar
8. Polyakov, A. Y., Smirnov, N. B., Kozhukhova, E. A., Vdovin, V. I., Ip, K., Heo, Y. W., Norton, D. P., and Pearton, S. J., Appl. Phys. Lett. 83, 1575 (2003).Google Scholar
9. Yuan, G., Ye, Z., Zhu, L., Huang, J., Qian, Q. and Zhao, B., J. Crystal Growth 268, 169 (2004).Google Scholar
10. Oh, D. C., Kim, J. J., Makino, H., Hanada, T., Cho, M. W., Yao, T. and Ko, H. J., Appl. Phys. Lett. 86, 042110 (2005).Google Scholar
11. Mosbacker, H. L., Strzhemechny, Y. M., White, B. D., Smith, P. E., Look, D. C., Reynolds, D. C., Litton, C. W. and Brillson, L. J., Appl. Phys. Lett. 87, 012102 (2005).Google Scholar
12. Sheng, H., Muthukumar, S., Emanetoglu, N. W. and Lu, Y., Appl. Phys. Lett. 80, 2132 (2002).Google Scholar
13. Ip, K., Gila, B. P., Onstine, A. H., Lambers, E. S., Heo, Y. W., Baik, K. H., Norton, D. P., Pearton, S. J., Kim, S., LaRoche, J. R. and Ren, F., Appl. Phys. Lett. 84, 5133 (2004).Google Scholar
14. Kim, S. H., Kim, H. K. and Seong, T. Y., Appl. Phys. Lett. 86, 112101, (2005).Google Scholar
15. Kim, S. H., Kim, H. K. and Seong, T. Y., Appl. Phys. Lett. 86, 022101 (2005).Google Scholar
16. Gu, Q. L., Ling, C. C., Chen, X. D., Cheng, C. K., Ng, A. M. C., Beling, C. D., Fung, S., Djurišić, A. B., Lu, L. W., Brauer, G. and Ong, H. C., Appl. Phys. Lett. 90, 122101 (2007).Google Scholar
17. Henrich, V. E. and Cox, P. A., The Surface Science of Metal Oxides (Cambridge University Press, Cambridge, UK, 1994), p. 297.Google Scholar
18. Moormann, H., Kohl, D., and Heiland, G., Surf. Sci. 100, 302 (1980).Google Scholar
19. Heiland, G. and Kunstmann, P., Surf. Sci. 13, 72 (1969).Google Scholar
20. Nakagawa, C. M. and Mitsudo, H., Surf. Sci. 175, 157 (1986).Google Scholar
21. Positron Beams and Their Applications; Coleman, P. ed.; World Scientific: Singapore, 2000.Google Scholar
22. Schultz, P. J. and Lynn, K. G., Rev. Mod. Phys. 60, 701 (1988).Google Scholar
23. Brauer, G., Anwand, W., Skorupa, W., Kuriplach, J., Melikhova, O. and Moisson, C., Phys. Rev. B 74, 045208 (2006).Google Scholar
24. Tuomisto, F., Ranki, V., Saarinen, K. and Look, D. C., Phys. Rev. Lett. 91, 205502 (2003).Google Scholar
25. , Koida, Chichibu, S. F., Uedono, A., Tsukazaki, A., Kawasaki, M., Sota, T., Segawa, Y. and Koinuma, H., Appl. Phys. Lett. 82, 532 (2003).Google Scholar
26. Brunner, S., Puff, W., Balogh, A. G. and Mascher, P., Mater. Sci. Forum 363-365, 141 (2001).Google Scholar
27. Chen, Z. Q., Maekawa, M., Yamamoto, S., Kawasuso, A., Yuan, X. L., Sekiguchi, T., Suzuki, R. and Ohdaira, T., Phys. Rev. B 69, 035210 (2004).Google Scholar