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Atomistic Modeling of Amorphization in Silicon

Published online by Cambridge University Press:  21 March 2011

Lourdes Pelaz ,
Luis A. Marqués ,
George H. Gilmer  and
Juan Barbolla
Lourdes Pelaz
Affiliation:
Dept. Electricidad y Electró3nica, Universidad de Valladolid, 47011 Valladolid, Spain
Luis A. Marqués
Affiliation:
Dept. Electricidad y Electró3nica, Universidad de Valladolid, 47011 Valladolid, Spain
George H. Gilmer
Affiliation:
Agere Systems (Formerly Bell Laboratories, Lucent Technologies) 600 Mountain Avenue, Murray Hill, NJ 07974, U.S.A.
Juan Barbolla
Affiliation:
Dept. Electricidad y Electró3nica, Universidad de Valladolid, 47011 Valladolid, Spain
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Abstract

We discuss atomistic simulations of ion implantation and annealing of Si over a wide range of ion dose and substrate temperatures. The DADOS Monte Carlo model has been extended to include the formation of amorphous regions, and this allows simulations of dopant diffusion at high doses. As the dose of ions increases, a continuous amorphous layer may be formed. In that case, most of the excess interstitials generated by the implantation may be swept to the surface as the amorphous layer regrows, instead of diffusing through the crystalline region. This process reduces the amount of transient enhanced diffusion during annealing. This model also reproduces the dynamic annealing during high temperature implants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J9.3
Copyright
Copyright © Materials Research Society 2001

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References

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