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Atomistic Aspects of Silicide Reactions Studied with STM

Published online by Cambridge University Press:  03 September 2012

P. A. Bennett ,
S. A. Parikh ,
M. Y. Lee ,
David G. Cahill ,
M. Copel  and
R. M. Tromp
P. A. Bennett
Affiliation:
Box 871504, Physics Dept., ASU, Tempe, AZ 85287–1504
S. A. Parikh
Affiliation:
Box 871504, Physics Dept., ASU, Tempe, AZ 85287–1504
M. Y. Lee
Affiliation:
Box 871504, Physics Dept., ASU, Tempe, AZ 85287–1504
David G. Cahill
Affiliation:
Dept. of Mat. Sci. and Eng., U. of Illinois, Urbana, IL 61801
M. Copel
Affiliation:
T. J. Watson Res. Cntr., P. 0. Box 218, Yorktown Hts, NY 10598
R. M. Tromp
Affiliation:
T. J. Watson Res. Cntr., P. 0. Box 218, Yorktown Hts, NY 10598
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Abstract

We discuss atomistic aspects of the silicide contact reaction inferred primarily from STM observations of the prototype system Co/Si(1 11). For room temperature deposition and low coverage (0.01M1) we find that metal atoms exist as near-surface interstitials within the 7×7 reconstruction. Bond breaking associated with silicide formation occurs only at higher coverages. Deposition at 320C results in flat-topped triangular islands of epitaxial CoSi2 with a metastable 7-fold (111) interface, stabilized by the lateral silicon-silicide interface along the island edges. Some islands are covered with a 2×2 array of silicon adatoms. Very high temperature annealing (1200C) results in an “impurity stabilized 1×1” surface which is in fact a lattice gas of ring-clusters that appear like tiny donuts or bagels in empty states STM images. These structures phase-separate from the clean 7×7 structure upon cooling below 850C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 239
Copyright
Copyright © Materials Research Society 1994

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References

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