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Atomie Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching

Published online by Cambridge University Press:  10 February 2011

Kwang-Ki Choi ,
Tae-Yeon Seong ,
Seonghoon Lee ,
Hyunsang Hwang  and
Yong Sun Sohn
Kwang-Ki Choi
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 572 Sangam-dong, Kwangsan-ku, Kwangju 506–712, Korea, tyseong@matla.kjist.ac.kr
Tae-Yeon Seong
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 572 Sangam-dong, Kwangsan-ku, Kwangju 506–712, Korea, tyseong@matla.kjist.ac.kr
Seonghoon Lee
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 572 Sangam-dong, Kwangsan-ku, Kwangju 506–712, Korea, tyseong@matla.kjist.ac.kr
Hyunsang Hwang
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, 572 Sangam-dong, Kwangsan-ku, Kwangju 506–712, Korea, tyseong@matla.kjist.ac.kr
Yong Sun Sohn
Affiliation:
Memory R&D Division, Hyundai Electronics Co., Ltd., Kyoungki-do 467–701, Korea
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Abstract

Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of ∼1×1017/cm3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 53
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Spinella, C., Raineri, V. and Campisano, S.U., J. Electrochem. Soc. 142, 1601 (1995).Google Scholar
2. Maher, D.M. and Zhang, B., J. Vac. Sci. Technol. B12, 347 (1994).Google Scholar
3. Gong, L., Peterson, S., Frey, L., Ryssel, H., Nucl. Instrum. Methods B96, 133 (1995).Google Scholar
4. Venables, D. and Maher, D.M., J. Vac. Sci. Technol. B14, 421 (1996).Google Scholar
5. Takigami, T., Tanimoto, M., Appl. Phys. Lett. 58, 2288 (1991).Google Scholar
6. Barrett, M., Dennis, M., Tiffin, D., Li, Y., and Shih, C. K., IEEE Electron Device Lett. 16, 118 (1995)Google Scholar
7. Raineri, V., Privitera, V., Vanderworst, W., Hellemans, L. and Snauwaert, J., Appl. Phys. Lett. 64, 354(1994).Google Scholar
8. Muraoka, H., Ohashi, T. and Sumitomo, Y., J. Electrochem. Soc. 120, 96c (1973).Google Scholar
9. Spinella, C., Raineri, V., Saggio, M., Privitera, V. and Campisano, S.U., Nucl. Instrum. Methods. B96, 139(1995).Google Scholar
10. Fair, R.B. and Shen, M., paper presented at 4th International Workshop on the Measurement, Characterisation and Modelling of Ultra-Shallow Doping Profiles in Semiconductors, Research Triangle Park, USA, April 6–9, 1997.Google Scholar
11. Liu, J., Gass, M.L.A. and Gronsky, R., J. Vac. Sci. Technol. B12, 353 (1994).Google Scholar
12. Turner, D.R., J. Electrochem. Soc. 107, 810 (1960).Google Scholar
13. Rimini, E., Ion Implantation: Basics to Device Fabrication, (Kluwer Academic Publisher, Massachusetts, 1995).Google Scholar
14. Mehrer, H., Phys. Stat. Sol. (a) 104, 247 (1987).Google Scholar