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Atomic Layer Deposition of Tin Thin Films by Sequential Introduction of Ti Precursor and NH3

Published online by Cambridge University Press:  10 February 2011

Jae-Sik Min ,
Young-Woong Son ,
Won-Gu Kang  and
Sang-Won Kang
Jae-Sik Min
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1, Kusong-Dong, Yusong-Ku, Taejon, Korea
Young-Woong Son
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1, Kusong-Dong, Yusong-Ku, Taejon, Korea
Won-Gu Kang
Affiliation:
GeniTech. Inc. 1694-5 Shinil-dong Taedeok-gu Taejon, Korea
Sang-Won Kang
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1, Kusong-Dong, Yusong-Ku, Taejon, Korea
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Abstract

Atomic layer deposition(ALD) of amorphous TiN films on SiO2 between 170°C and 210°C has been investigated by alternate supply of reactant sources, Ti[N(C2H5CH3)2]4 [tetrakis(ethylmethylamino)titanium : TEMAT] and NH3. Reactant sources were injected into the reactor in the order of TEMAT vapor pulse, Ar gas pulse, NH3 gas pulse and Ar gas pulse. Film thickness per cycle was saturated at around 0.5 nrm/cycle with sufficient pulse time of TEMAT at 200°C. The ideal linear relationship between number of cycles and film thickness is confirmed. As a result of surface limited reactions of ALD, step coverage was excellent. Particles caused by the gas phase reactions between TEMAT and NH3 were almost free because TEMAT was separated from NH3 by the Ar pulse. In spite of relatively low substrate temperature, carbon impurity was incorporated below 4at%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 337
Copyright
Copyright © Materials Research Society 1998

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References

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