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Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis(dimethylamino)Hafnium (TDMAH) and Ozone

Published online by Cambridge University Press:  01 February 2011

Xinye Liu ,
Sasangan Ramanathan  and
Thomas E. Seidel
Xinye Liu
Affiliation:
Genus, Inc., 1139 Karlstad Drive, Sunnyvale, CA 94089
Sasangan Ramanathan
Affiliation:
Genus, Inc., 1139 Karlstad Drive, Sunnyvale, CA 94089
Thomas E. Seidel
Affiliation:
Genus, Inc., 1139 Karlstad Drive, Sunnyvale, CA 94089
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Abstract

Hafnium oxide (HfO2) thin films were synthesized from tetrakis(dimethylamino) hafnium (TDMAH) and ozone (O3) by atomic layer deposition (ALD) on 200 mm silicon wafers. Gradual saturation was observed for TDMAH exposure pulse. However O3 showed better saturation behavior for O3exposure. Yet, 100% step coverage was achieved for ~100nm trenches with aspect ratio of 35. Temperature dependence of the deposition rate was studied at susceptor temperature from 160°C to 420°C. The lowest deposition rate was observed at 320°C. Mercury probe measurements indicated the dielectric constant increased from 16 to 20 as susceptor temperature increased from 200°C to 320°C. Selected comparisons with tetrakis (ethylmethylamino) hafnium (TEMAH) were also made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D3.8
Copyright
Copyright © Materials Research Society 2003

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