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a-Si:H Films Prepared by Ecr Plasma Enhanced CVD

Published online by Cambridge University Press:  26 February 2011

H. Yamamoto ,
S. Hine ,
S. Yamakawa ,
N. Tubouchi  and
M. Miyamura
H. Yamamoto
Affiliation:
Mitsubishi Electric Corp., 4–1 Mizuhara, Itami, 664., Japan
S. Hine
Affiliation:
Mitsubishi Electric Corp., 4–1 Mizuhara, Itami, 664., Japan
S. Yamakawa
Affiliation:
Mitsubishi Electric Corp., 4–1 Mizuhara, Itami, 664., Japan
N. Tubouchi
Affiliation:
Mitsubishi Electric Corp., 4–1 Mizuhara, Itami, 664., Japan
M. Miyamura
Affiliation:
ULVAC Corp., 25OO Hagisono, Chigasaki, Kanagawa, 253, Japan
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Abstract

Hydrogenated amorphous silicon (a-Si:H) films prepared by electron cyclotron resonance plasma enhanced CVD (ECR PECVD) were investigated electrically and optically. The electrical and optical properties of a-Si:H were strongly dependent on magnet coil current, microwave power, and substrate temperature. A high deposition rate of a-Si:H up to 150 nm/min was realized by this technology. The photoconductive characteristics prepared at 300°C are comparable to those obtained by glow discharge PECVD (GD PECVD).

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 217
Copyright
Copyright © Materials Research Society 1987

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References

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