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Arsenic Incorporation Behavior in Nitrogen-rich GaNAs Alloys Synthesized by Metalorganic Chemical Vapor Deposition (MOCVD)
Published online by Cambridge University Press: 01 February 2011
Abstract
Homogeneous GaNAs alloy films containing 3 to 4 percent of arsenic anion fraction were synthesized by metalorganic chemical vapor deposition (MOCVD). Post-growth annealing resulted in the formation of GaAs precipitates of several nanometers in size embedded in the nitrogen-rich GaN(As) matrix, while as-grown ternary films exhibited no evidence of phase segregation. Band gap reduction due to alloying was observed by the optical transmission measurements, leading to an estimate for the bowing parameter of 25 eV in the films with the arsenic content of 3.5 %.
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- Copyright © Materials Research Society 2004