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Arsenic and Antimony Doping: An Attempt to Deposit n-type CVD Diamond

Published online by Cambridge University Press:  01 February 2011

Paul William May ,
Martin Davey ,
Keith N Rosser  and
Peter J Heard
Paul William May
Affiliation:
paul.may@bris.ac.uk, University of Bristol, School of Chemistry, Cantock's Close, Bristol, BS8 1TS, United Kingdom, +44 (0)117 9289927, +44 (0)117 9251295
Martin Davey
Affiliation:
m.davey@bris.ac.uk, University of Bristol, School of Chemistry, Cantock's Close, Bristol, BS8 1TS, United Kingdom
Keith N Rosser
Affiliation:
Keith.Rosser@bristol.ac.uk, University of Bristol, School of Chemistry, Cantock's Close, Bristol, BS8 1TS, United Kingdom
Peter J Heard
Affiliation:
Peter.Heard@bristol.ac.uk, University of Bristol, Interface Analysis Centre, 121 St. Michael's Hill, Bristol, BS2 8BS, United Kingdom
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Abstract

We report the results of experiments that attempt to deposit n-type CVD diamond in a standard hot filament reactor using 1%CH4/H2 gas mixtures, using (i) AsH3 as a gas phase source of arsenic, and (ii) evaporated Sb or Sb(Ph)3 as a source of antimony. SIMS measurements revealed that under these conditions, neither Sb nor As is incorporated into the diamond film, and the Raman spectra, electrical conductivity and crystallite morphology remain unchanged from that of undoped diamond. These experiments confirm the predicted low incorporation efficiency for As and Sb, and we conclude that doping CVD diamond with these elements cannot readily be achieved in this manner.

Keywords

diamonddopantchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1039: Symposium P – Diamond Electronics–Fundamentals to Applications II , 2007 , 1039-P15-01
Copyright
Copyright © Materials Research Society 2008

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