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Argon Plasma Induced Surface Modifications For Resistless Patterning Of Aluminium Films

Published online by Cambridge University Press:  16 February 2011

Neeta Agrawal ,
R. D. Tarey  and
K. L. Chopra
Neeta Agrawal
Affiliation:
Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Delhi-110016, INDIA
R. D. Tarey
Affiliation:
Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Delhi-110016, INDIA
K. L. Chopra
Affiliation:
Indian Institute of Technology, Kharagpur-721302, INDIA
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Abstract

Argon plasma exposure has been used to induce surface chemical modification of aluminium thin films, causing a drastic change in etch rate in standard HNO3/CH3COOH/H3PO4 etchant. The inhibition period was found to increase with power and Ar plasma exposure time. Auger electron and x-ray photoelectron spectroscopies have indicated formation of an aluminium fluoride (AlF3) surface layer due to fluorine contamination originating from the residue left in the plasma chamber during CF4 processing. The high etch selectivity between unexposed and argon plasma exposed regions has been exploited as a new technique for resistless patterning of aluminium.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 389
Copyright
Copyright © Materials Research Society 1991

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References

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