Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-24T12:31:39.089Z Has data issue: false hasContentIssue false
  • English
  • Français

Approaches For Reduction Of The Defect Density In Group III Nitride Based Heterostructures

Published online by Cambridge University Press:  17 March 2011

T. S. Zheleva ,
F. Karoui ,
K. Kirchner ,
M. Derenge ,
K. A. Jones ,
R. D. Vispute  and
T. Venkatesan
T. S. Zheleva
Affiliation:
US Army Research Laboratory, Attn: AMSRL-SE-EM, 2800 Powder Mill Road, Adelphi, MD 20783, US North Carolina State University, Box 7907, Raleigh, NC 27695-7907
F. Karoui
Affiliation:
North Carolina State University, Box 7907, Raleigh, NC 27695-7907
K. Kirchner
Affiliation:
US Army Research Laboratory, Attn: AMSRL-SE-EM, 2800 Powder Mill Road, Adelphi, MD 20783, US
M. Derenge
Affiliation:
US Army Research Laboratory, Attn: AMSRL-SE-EM, 2800 Powder Mill Road, Adelphi, MD 20783, US
K. A. Jones
Affiliation:
US Army Research Laboratory, Attn: AMSRL-SE-EM, 2800 Powder Mill Road, Adelphi, MD 20783, US
R. D. Vispute
Affiliation:
Department of Physics, University of Maryland, College Park, MD 20742.
T. Venkatesan
Affiliation:
Department of Physics, University of Maryland, College Park, MD 20742.
Get access

Abstract

Lateral epitaxial overgrowth (LEO), pendeo-epitaxy (PE), and solid-phase epitaxial recrystallization (SPER) are discussed as three approaches for reducing the defect density in group III nitride based heterostructures. Studies of the LEO GaN and PE GaN revealed, that a major factor for the defect reduction in the laterally overgrown regions is the change of the dominant growth direction - from vertical in the window regions to lateral in the regions over the mask or over the trenches, and the related threading dislocations lines redistribution. The mechanisms of defect reduction in LEO GaN and PE GaN are similar, although they arise through different process routes, and are related to the free-standing (PE) or quasi-free-standing (LEO) growth of GaN, and the associated stress redistribution. The stress distributions in the LEO and PE GaN heterostructures are calculated and compared with finite element modeling. Another approach for reduction of the defects is the SPER process and the related thermal activation for dislocation reactions and grain boundary mobility and migration. This approach is shown in the example of annealed AlN films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G5.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Senoh, M., Nagahama, S., Isawa, N., Yamada, T., Matsushita, T., Kiuoki, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, M., Appl. Phys. Lett. 72, 211 (1998).Google Scholar
2. Kozodoy, P., Ibbetson, J.P., Marchand, H., Fini, P.T., Keller, S., DenBaars, S.P., Speck, J.S., and Mishra, U.K., Appl. Phys. Lett. 73, 975 (1998).Google Scholar
3. Mukai, T., Takekawa, K., Nakamura, S., Jpn. J. Appl. Phys. 37, 839 (1998).Google Scholar
4. Sasaoka, C., Sumakawa, H., Kimura, A., Nido, M., Usui, A., and Sakai, A., J. Cryst. Growth, 189, 61 (1998).Google Scholar
5. Ventury, R., Marchand, H., Ibbetson, J.P., Fini, P.T., Keller, S., Speck, J.S., DenBaars, S.P., and Mishra, U., 25-th Int. Symp. on Compound Semicond., Nara, Japan, Oct 12-16, 1998.Google Scholar
6. Parish, G., Keller, S., Kozodoy, P., Ibbetson, J.P., Marchand, H., Fini, P.T., Fleisher, S.B., DenBaars, S.P., Mishra, U.K., Tarsa, E.J., Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, Australia, 14-16 Dec. 1998.Google Scholar
7. Zheleva, T.S., Nam, O.H., Bremser, M.D., and Davis, R.F., Appl. Phys. Lett. 71 (17), 2472 (1997).Google Scholar
8. Nam, O.H., Zheleva, T.S., Bremser, M.D., and Davis, R.F., Appl. Phys. Lett. 71 (18), 2638 (1997).Google Scholar
9. Usui, A., Sunakawa, H., Sakai, A., Jamaguchi, A.A., Jpn. J. Appl. Phys. 36, L899 (1997).Google Scholar
10. Sakai, A., Sunakawa, H., Usui, A., Appl. Phys. Lett. 71, 2259 (1997).Google Scholar
11. Nam, O.-H., Zheleva, T.S., Bremser, M.D., and Davis, R.F., J. Electr. Mater. 27, 233 (1998).Google Scholar
12. Zheleva, T.S., Nam, O.-H., Ashmawi, W.M., Griffin, J.D., and Davis, R.F., J. Cryst. Growth, 222, 706 (2001).Google Scholar
13. Fareed, R.S.Q., Yang, J.W., Zhang, J., Adivarahan, V., Chaturvedi, V., and Khan, M. Asif, Appl. Phys. Lett. 77 (15), 2343 (2000).Google Scholar
14. Marchand, H., Ibbetson, J.P., Fini, P.T., Keller, S., DenBaars, S., Speck, J.S., Mishra, U.K., J. Cryst. Growth, 195, 328 (1998).Google Scholar
15. Marchand, H., Wu, X.H., Ibbetson, J.P., Fini, P.T., Kozodoy, P., Keller, S., Speck, J.S., DenBaars, S.P., and Mishra, U.K., Appl. Phys. Lett. 73, 747, (1998).Google Scholar
16. Beaumont, B., Haffouz, S., Gibart, P., Appl. Phys. Lett. 72 (8), 921 (1998).Google Scholar
17. Beaumont, B., Vaille, M., Nataf, G., Bouillè, A., Guillaume, J.-C., Vènnègues, P., Haffouz, S., Gibart, Pierre, MRS Internet J. Nitride Semicond. Res. 3, 20 (1998).Google Scholar
18. Dunn, K., Babcock, S., Stone, D., Matyi, R., Zhang, L., and Kuech, T., MRS Internet J. Nitride Semicond. Res. 5S1, W2.11 (2000).Google Scholar
19. Zheleva, T., Smith, S., Thomson, D., Linthicum, K., Rajagopal, P., and Davis, R.F., J. Electr. Mater. 28, (4), L5 (1999).Google Scholar
20. Zheleva, T., Smith, S., Thomson, D., Gehrke, T., Linthicum, K., Rajagopal, P., Carlson, E., Ashmawi, W., and Davis, R.F., MRS Internet J. Nitride Semicond. Res. 4S1, G3.38 (1999).Google Scholar
21. Linthicum, K.J., Gehrke, T., Thomson, D.B., Tracy, K.M., Carlson, E.P., Smith, T.P., Zheleva, T.S., Zorman, C.A., Mehregany, M., Davis, R.F., MRS Internet J. Nitride Semicond. Res. 4S1, G4.9 (1999).Google Scholar
22. Linthicum, K.J., Gehrke, T., Thomson, D.B., Carlson, E.P., Rajagopal, P., Smith, T.P., and Davis, R.F., Appl. Phys. Lett., 75 (2), 196 (1999).Google Scholar
23. Gehrke, T., Linthicum, K.J., Thomson, D.B., Rajagopal, P., Smith, T.P., and Davis, R.F., MRS Internet J. Nitride Semicond. Res. 4S1, G3.2 (1999).Google Scholar
24. Zheleva, T. S., Ashmawi, W. M., and Jones, K. A., phys. stat. sol. (a) 176, 545 (1999).Google Scholar
25. Davis, R. F., Nam, O.-H., Zheleva, T.S., Bremser, M.D., Linthicum, K.J., Gehrke, T., Rajagopal, P., and Thomson, D.B., Inst. Phys. Conf. Ser. No 164, Microsc. Semicond. Mater. Conf., Oxford, 22-25 March 1999.Google Scholar
26. Davis, R. F., Nam, O.-H., Zheleva, T.S., Gehrke, T., Linthicum, K.J., and Rajagopal, P., Materials Science Forum, Vols. 338–342, 1471 (2000).Google Scholar
27. Kong, H.S., Edmond, J., Doverspike, K., Emerson, D., Bulman, G., Haberern, K., Dieringer, H., and Slater, D., Materials Science Forum, 338–342, 1477 (2000).Google Scholar
28. Fini, P., Marchand, H., Ibbetson, J.P., Moran, B., Zhao, L., DenBaars, S.P., Speck, J.P., and Mishra, U., Mater. Res. Soc. Symp. Proc. 572, 315 (1999).Google Scholar
29. Kidoguchi, I., Ishibashi, A., Sugahara, G., and Ban, Y., Appl. Phys. Lett. 76, (25), 3768 (2000).Google Scholar
30. Detchprom, T., Yano, M., Sano, S., Nakamura, R., Mochiduki, S., Nakamura, T., Amano, H., Akasaki, I., Jpn. J. Appl. Phys. 40, Pt.2, No.1A/B, L16 (2001).Google Scholar
31. Stritmatter, A., Rodt, S., Reiâmann, L., Bimberg, D., Schroder, H., Obermeyer, T., Riemann, T., Christen, J., Krost, A., Appl. Phys. Lett. 78 (6), 727 (2001).Google Scholar
32. Osipyan, Y.A. and Smirnova, I.S., phys.stat.sol. 30, 19 (1968).Google Scholar
33. Hirth, J. and Lothe, J., Theory of Dislocations, (John Wily and Sons, New York, 1982).Google Scholar
34. Romano, L. Ch. A7.3 in Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, (Ed. By Edgar, J. H., Strite, S., Akasaki, I., Amano, H. and Wetzel, C., INSPEC, London, 1999).Google Scholar
35. Mathis, S.K., Romanov, A.E., Chen, L.F., Beltz, G.E., Pompe, W., and Speck, J. S., phys. stat. sol. (a) 179, 125 (2000).Google Scholar
36. Chien, F.R., Ning, X.J., Stemmer, S., Pirouz, P., Bremser, M.D., Davis, R.F., Appl. Phys. Lett. 68, 2678 (1996).Google Scholar
37. Ning, X.J., Chien, F.R., Pirouz, P., Yang, J.W., Khan, M. Asif, J. Mater. Res. 11 (3) 580 (1996).Google Scholar
38. Romano, L.T., Krusor, B.S., Molnar, R.J., Appl. Phys. Lett. 71, 2283 (1997).Google Scholar
39. Liliental-Weber, Z., Washburn, J., Pakula, K., Baranovski, J., Microscopy and Microanalysis, the J. of the Electr. Microsc. Soc. of America, 3, 436 (1997).Google Scholar
40. Rouviere, J.L., Arlery, M., Niebuhr, R., Bachem, K. H., Briot, O., Mat. Sci. and Eng. B 43, 161 (1997).Google Scholar
41. Albrecht, M., Nikitina, I.P., Nikolaev, A.E., Melnik, Yu. V., Dmitriev, V.A., and Strunk, H.P., phys. stat. sol. (a) 176, 453 (1999).Google Scholar
42. Kato, Y., Kitamura, S., Hiramatsu, K., and Sawaki, N., J. Cryst. Growth, 144, 133 (1994).Google Scholar
43. Chen, Y., Schneider, R., Wang, S.Y., Kern, R.S., Chen, C.H., Kuo, C.P., Appl. Phys. Lett. 75, 2062 (1999).Google Scholar
44. Ashby, C., Mitchell, C., Han, J., Missert, N., Provencio, P., Follstaedt, D., Peake, G., and Griego, L., Appl. Phys. Lett. 77 (20), 3233 (2000).Google Scholar
45. Coltrin, M.E., Willan, C.C., Bartram, M.E., Han, J., Missert, N., Crawford, M.H., Baca, A.G., MRS Internet J. Nitride Semicond. Res. 4 U602 (1999).Google Scholar
46. Mitchell, C., Coltrin, M., and Han, J., J. Cryst. Growth, 222, 144 (2001).Google Scholar
47. Coltrin, M., Mitchell, C., and Han, J., Electrochemical Society Proceedings Volume 2001–1, 1 (2001).Google Scholar
48. Fini, P., Munkholm, A., Thompson, C., Stevenson, G.B., Eastman, J.A., Murty, M.V.R., Auciello, O., Zhao, L., denBaars, S.P., Speck, J.S., Appl. Phys. Lett. 76 (26), 3893 (2000).Google Scholar
49. Hearne, S., Chason, E., Han, J., Floro, J.A., Figiel, J., Hunter, J., Amano, H., Tsong, I.S.T., Appl. Phys. Lett. 74 (3), 356 (1999).Google Scholar
50. Gehrke, T., Linthicum, K., Preble, E., Rajagopal, P., Ronning, C., Zorman, C., Mechregany, M., and Davis, R.F., J. Electr. Mater. 29 (3), 306 (2000).Google Scholar
51. Chu, S.N.G., Macrander, A.T., Strege, K.E., and Johnston, W. D. Jr, J.Appl. Phys. 57 (2), 249 (1985) and the references therein.Google Scholar
52. Suzuki, K., Ichihara, M., and Takeuchi, S., Jpn. J. Appl. Phys. Part 1, 33, 1114 (1994).Google Scholar
53. Jones, K.A., Derenge, M.A., Zheleva, T.S., Kirchner, K.W., Ervin, M.H., Wood, M.C., Vispute, R.D., Sharma, R.P., and Venkatesan, T., J. Electr. Mater. 29 (3), 262 (2000).Google Scholar
54. Vispute, R.D., Patel, A., Sharma, R.P., Venkatesan, T., Zheleva, T., and Jones, K.A., Mater. Res. Soc. Symp. Proc. 587, 07.4.1 (2000).Google Scholar
55. Fan, Z.Y., Rong, G., Newman, N., and Smith, D., Appl. Phys. Lett. 76 (14), 1839 (2000).Google Scholar
56. Vispute, R.D., Wu, H., and Narayan, J., Appl. Phys. Lett. 67 (11), 1549 (1995).Google Scholar
57. Ponce, F.A., Walle, C.G. Van de, and Northrup, J.E., Phys. Rev. B, 53 (11), 7473 (1996).Google Scholar
58. Dovidenko, K., Oktyabrsky, S., Narayan, J., Razeghi, M., J. Appl. Phys. 79 (5), 2439 (1996).Google Scholar
59. Dovidenko, K., Oktyabrsky, S., Narayan, J., J. Appl. Phys. 82 (9), 4296 (1997).Google Scholar
60. Vermaut, P., Ruterana, P., Nouet, G., and Morkoc, H., Philos. Mag.A 63, 239 (1997).Google Scholar
61. Humfreys, F.J. and Hatherly, M., Recrystallization and Related Annealing Phenomena, (Elsevier Science Ltd. 1995).Google Scholar
62.ANSYS Finite Element Analysis, Release 5.6, Swanson Analysis System, Inc. 1999.Google Scholar
63. Zheleva, T., Ashmawi, W., Nam, O.-H., and Davis, R.F., Appl. Phys. Lett. 74 (17), 2492 (1999).Google Scholar
64. Feng, Z., Lovell, E.G., Engelstad, R.L., Dunn, K.A., Babcock, S.E., Kuech, T.F., MRS Internet J. Nitride Semicond. Res. (2000-2001).Google Scholar
65. Strunk, H.P. (private communication, 2000).Google Scholar
66. Harris, G.L. (Ed.), Properties of SiC, (EMIS Data Review Series, London, 1993).Google Scholar
67. Edgar, J.H. (Ed.) Properties of Group III Nitrides, (EMIS Data Review Series, London 1994).Google Scholar
68. Kim, K., Lambrecht, W., and Segal, B., Phys. Rev. B 53, 16310 (1996).Google Scholar
69. Martin, R., Phys. Rev. B 6 (12), 4546 (1972).Google Scholar
70. Wright, A., J. Appl. Phys. 82, 2833 (1997).Google Scholar
71. CRC Handbook of Chemistry and Physics, 72nd ed., ed. Lide, D. (Chemical Rubber Corp., Boca Raton, Fl 1991-1992).Google Scholar