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Applications of Polysilicon Films in Microsensors and Microactuators

Published online by Cambridge University Press:  22 February 2011

Roger T. Howe
Roger T. Howe*
Affiliation:
Berkeley Sensor & Actuator Center Dept. of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory, University of California, Berkeley, California 94720
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Abstract

This paper reviews the applications of polysilicon in microsensor technology and in the emerging field of microfabricated actuators. Polysilicon is an attractive material for thin-film strain gauges, and is also used to fabricate micromechanical structures. The need for better understanding of the non-electrical properties of polysilicon, such as Young's modulus, residual strain, ultimate strength, friction, and wear, is emphasized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 213
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Petersen, K. E., Proc. IEEE, 70, 420 (1982).Google Scholar
2. Wise, K. D., in Micromachining and Micropackaging of Transducers, edited by Fung, C. D., et al, (Elsevier Science Publishers, New York, 1985), p. 3.Google Scholar
3. Obermeier, E., Kopystynski, P., and Nieβl, R., Technical Digest, IEEE Solid-State Sensors Workshop, Hilton Head, SC, June 1986.Google Scholar
4. Howe, R. T., in Micromachining and Micropackaging of Transducers, edited by Fung, C. D., et al, (Elsevier Science Publishers, New York, 1985), p. 169.Google Scholar
5. Guckel, H. and Bums, D. W., Technical Digest, IEEE Int. Electron Devices Mtg., Los Angeles, CA, 176 (1986).Google Scholar
6. Lu, N. C.-C., Gerzberg, L., Lu, C.-Y., and Meindl, J.D., IEEE Trans. Electron Devices, ED–28, 818 (1981).Google Scholar
7. Lüder, E., Sensors and Actuators, 10, 9 (1986).Google Scholar
8. Seto, J. Y. W., J. Appl. Phys., 47, 4780 (1976).Google Scholar
9. French, P. J. and Evans, A. G. R., Sensors and Actuators, 8, 219 (1985).Google Scholar
10. Erskine, J. C., IEEE Trans. Electron Devices, ED–30, 796 (1983).Google Scholar
11. Schubert, D., Jenschke, W., Uhlig, T., Schmidt, F.M., Sensors and Actuators, 11, 145 (1987).Google Scholar
12. French, P. J. and Evans, A. G. R., Technical Digest, Int. Conf. on Solid-State Sensors and Actuators, Tokyo, Japan, 379 (1987).Google Scholar
13. Guckel, H., Burns, D. W., and Rutigliano, C. R., Technical Digest, IEEE Solid-State Sensors Workshop, Hilton Head, SC, June 1986.Google Scholar
14. Kopystynski, P., Obermeier, E., Technical Digest, Int. Conf. on Solid-State Sensors and Actuators, Tokyo, Japan, June 1987, p. 348.Google Scholar
15. Germer, W. and Tödt, W., Sensors and Actuators, 4, 183 (1983).Google Scholar
16. Binder, J., Henning, W., Obermeier, E., Schaber, H., and Cutter, D., Sensors and Actuators 4, 527 (1983).Google Scholar
17. Detry, J., Koneval, D., and Blackstone, S., Technical Digest, Int. Conf. on Solid-State Sensors and Actuators, Philadelphia, PA, 278 (1985).Google Scholar
18. Dössel, O., Sensors and Actuators, 6, 169 (1984).Google Scholar
19. Murarka, S. P. and Retajczyk, T.F. Jr., J. Appl. Phys., 54, 2069 (1983).Google Scholar
20. Choi, M. S. and Hearn, E. W., J. Electrochem. Soc., 131, 2443 (1984).CrossRefGoogle Scholar
21. Harbeke, G., Krausbauer, L., Steigmeier, E. F., Widmer, A. E., Kappert, H. F., and Neugebauer, G., RCA Review, 44, 287 (1983).Google Scholar
22. Howe, R. T. and Muller, R. S., J. Appl. Phys., 54, 4674 (1983).Google Scholar
23. Guckel, H., Randazzo, T., and Bums, D. W., J. Appl. Phys., 57, 1671 (1985).Google Scholar
24. Howe, R. T. and Muller, R. S., J. Electrochem. Soc., 130, 1420 (1983).Google Scholar
25. Guckel, H., Bums, D. W., Rutigliano, C. R., Showers, D. K., and Uglow, J., Technical Digest, Int. Conf. on Solid-State Sensors and Actuators, Tokyo, Japan, 277 (1987).Google Scholar
26. Petersen, K. E., IEEE Trans. Electron Devices, ED–25, 1241 (1978).CrossRefGoogle Scholar
27. Howe, R. T. and Muller, R. S., IEEE Trans. Electron Devices, ED–33, 499 (1986).Google Scholar
28. Howe, R. T., Technical Digest, Int. Conf. on Solid-State Sensors and Actuators, Tokyo, Japan, 845 (1987).Google Scholar
29. Tai, Y.-C., Mastrangelo, C., and Muller, R. S., Technical Digest, IEEE Int. Electron Devices Meeting, Washington, DC, paper 12.2 (1987).Google Scholar
30. Jaffe, J. M., Electron. Lett., 10, 420 (1974).Google Scholar
31. Nathanson, H. C., Newell, W. E., Wickstrom, R. A., and Davis, J. R. Jr., IEEE Trans. Electron Devices, ED–14, 117 (1967).Google Scholar
32. Howe, R. T. and Muller, R. S., Extended Abstracts, 82–1 Electrochem. Soc. Spring Mtg., Montreal, Que., Canada, 184 (1982).Google Scholar
33. Guckel, H., Bums, D. W., and Hammond, J. J., in Micronachining and Micropackaging of Transducers, edited by Fung, C. D., et al, (Elsevier Science Publishers, New York, 1985), p. 199.Google Scholar
34. Sugiyama, S., Suzuki, T., Kawahata, K., Shimaoka, K., Takigawa, M., and Igarashi, I., Technical Digest, IEEE Int. Electron Devices Mtg., Los Angeles, CA, 184 (1986).Google Scholar
35. Sugiyama, S., Kawahata, K., Abe, M., Funabashi, H., and Igarashi, I., Technical Digest, Int. Conf. on Solid-State Sensors and Actuators, Tokyo, Japan, 444 (1987).Google Scholar
36. Oki, A. K. and Muller, R. S., Technical Digest, IEEE Solid-State Sensors Workshop, Hilton Head, SC, June 1986.Google Scholar
37. Barth, P. W., Zdeblick, M. J., Kuc, Z., and Beck, P. A., Technical Digest, IEEE Solid- State Sensors Workshop, Hilton Head, SC, June 1986.Google Scholar
38. Tai, Y.-C., Muller, R. S., and Howe, R. T., Technical Digest, Int. Conf. on Solid-State Sensors and Actuators, Philadelphia, PA, 354 (1985).Google Scholar
39. Tai, Y.-C. and Muller, R. S., Technical Digest, Int. Conf. on Solid-State Sensors and Actuators, Tokyo, Japan, 360 (1987).Google Scholar
40. Guckel, H. and Bums, D. W., Technical Digest, Int. Conf. on Solid-State Sensors and Actuators, Philadelphia, PA, 364 (1985).Google Scholar
41. Fan, L.-S., Tai, Y.-C., and Muller, R. S., Technical Digest, Int. Conf. on Solid-State Sensors and Actuators, Tokyo, Japan, 849 (1987).Google Scholar
42. Gabriel, K. J., Trimmer, W. S. N., and Mehregany, M., Technical Digest, Int. Conf. on Solid-State Sensors and Actuators, Tokyo, Japan, 853 (1987).Google Scholar
43. Trimmer, W. S. N., Gabriel, K. J., and Mahadevan, R., Technical Digest, Int. Conf. on Solid-State Sensors and Actuators, Tokyo, Japan, 857 (1987).Google Scholar
44. Fujita, H. and Omodaka, A., Technical Digest, IEEE Micro Robots and Teleoperators Workshop, Hyannis, MA, Nov. 1987.Google Scholar
45. Lang, J. H., Schlecht, M. F., and Howe, R. T., Technical Digest, IEEE Micro Robots and Teleoperators Workshop, Hyannis, MA, Nov. 1987.Google Scholar