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Application of the Amphoteric Native Defect Model to Diffusion and Activation of Shallow Impurities in III-V Semiconductors

Published online by Cambridge University Press:  22 February 2011

W. Walukiewicz
W. Walukiewicz*
Affiliation:
Materials Sciences Division, Lawrence Berkeley Laboratory, University of California at Berkeley, Berkeley, CA, 94720
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Abstract

The effects of heavy doping on the formation of charged point defects are considered. It is shown that the Fermi level dependent part of the formation energy of highly localized defects can be determined using a universal energy reference, common to all III-V compound semiconductors. The concept is used to analyze the electrical activity and diffusion of dopant impurities in these compounds. We present model calculations which explain the correlation between the maximum hole concentrations and the acceptor impurity diffusion in InP and in InGaAs alloys, doped with group II acceptors. The calculations account for the redistribution of the impurity atoms at the lattice matched InP/InGaAs interface. It is also demonstrated that an abrupt enhancement of the Fermi level induced defect formation is observed at the onset of highly degenerate statistics in heavily doped semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 421
Copyright
Copyright © Materials Research Society 1993

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References

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